IRF1010ESTRLPBF vs STB60NF06T4 비교
다음의 상세 나란히 비교: IRF1010ESTRLPBF 제조: Infineon 및 STB60NF06T4 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
STMicroelectronics
STB60NF06T4 - 60V, 60A N-Channel Power MOSFET | STMicroelectronics
STB60NF06T4 ✓ 활성사양 비교
| 파라미터 | IRF1010ESTRLPBF | STB60NF06T4 |
|---|---|---|
| 브랜드 | Infineon | STMicroelectronics |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $0.80 |
| FET Type | N-Channel | — |
| Technology | HEXFET planar | — |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ Tc | 84 A | — |
| Power Dissipation (Pd) @ Tc | 200 W | — |
| On-Resistance (RDS on) @ VGS=10V | 12 mOhm | — |
| Total Gate Charge (Qg) | 86.6 nC | — |
| Operating Mode | Enhancement | — |
| Drive Voltage | 10 V (standard level) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| 패키지 | D2PAK (TO-263) | D2PAK (TO-263) |
| Qualification | JEDEC standard qualified | — |
| Structure | Planar cell (wide SOA) | — |
| Avalanche Testing | 100% avalanche energy tested | — |
| Sourcing | Multi-vendor, broad distribution availability | — |
| Pb-Free / RoHS | PBF (Pb-free) suffix | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at 25°C | — | 60 A |
| Continuous Drain Current (ID) at 100°C | — | 42 A |
| Pulsed Drain Current (IDM) | — | 240 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 14 mΩ (typ), 18 mΩ (max) |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Charge (Qg) | — | 60 nC (typ) |
| Input Capacitance (Ciss) | — | 2200 pF (typ) |
| Output Capacitance (Coss) | — | 350 pF (typ) |
| Reverse Transfer Capacitance (Crss) | — | 120 pF (typ) |
| Avalanche Energy (EAS) | — | 300 mJ |
| 동작 온도 범위 | — | -55°C to +175°C |
| RoHS 상태 | — | Compliant |
| 할로겐 프리 | — | Yes |