IRF150P220AKMA1 vs IRFP2907PBF 비교
다음의 상세 나란히 비교: IRF150P220AKMA1 제조: Infineon 및 IRFP2907PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF150P220AKMA1 | IRFP2907PBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $3.55 | $2.45 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF150P220AKMA1 | IRFP2907PBF |
| Technology | StrongIRFET | HEXFET Stripe Planar DMOS (N-Channel) |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS max) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 203 A | — |
| On-Resistance (RDS(on) max) at VGS=10V | 2.7 mOhm | — |
| Gate-Source Voltage (VGS max) | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (Pd) at Tc=25C | 556 W | — |
| Power Dissipation (Pd) at Ta=25C | 3.8 W | — |
| 동작 온도 범위 | -55C to +175C | — |
| 패키지 | TO-247-3 (PG-TO247-3) | — |
| 실장 유형 | Through Hole | — |
| Terminal Finish | Tin (Sn) | — |
| JESD-609 Code | e3 | — |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes | Yes |
| Drain-to-Source Voltage (V_DSS) | — | 75 V |
| Continuous Drain Current (I_D) at T_C = 25 C | — | 209 A |
| Static Drain-to-Source On-Resistance (R_DS(on)) | — | 4.5 mOhm at V_GS = 10 V |
| Power Dissipation (P_D) at T_C = 25 C | — | 470 W |
| Total Gate Charge (Q_g) | — | 410 nC |
| Maximum Junction Operating Temperature | — | +175 C |
| Package / Mounting Type | — | TO-247AC (Through Hole) |
| 핀 수 | — | 3 (Gate, Drain, Source) |
| RoHS Compliance | — | Yes (Pb-free) |
| Avalanche Rated | — | Yes (repetitive avalanche rated) |
| Body Diode | — | Integral (no external anti-parallel diode required) |