IRF150P220AKMA1 vs IRFP2907PBF Comparison

Detailed side-by-side comparison of IRF150P220AKMA1 by Infineon and IRFP2907PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF150P220AKMA1 IRFP2907PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.55 $2.45
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRF150P220AKMA1 IRFP2907PBF
Technology StrongIRFET HEXFET Stripe Planar DMOS (N-Channel)
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS max) 150 V β€”
Continuous Drain Current (ID) at Tc=25C 203 A β€”
On-Resistance (RDS(on) max) at VGS=10V 2.7 mOhm β€”
Gate-Source Voltage (VGS max) [DATA_NEEDED: VGS max] β€”
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typ] β€”
Power Dissipation (Pd) at Tc=25C 556 W β€”
Power Dissipation (Pd) at Ta=25C 3.8 W β€”
Operating Temperature Range -55C to +175C β€”
Package TO-247-3 (PG-TO247-3) β€”
Mounting Type Through Hole β€”
Terminal Finish Tin (Sn) β€”
JESD-609 Code e3 β€”
RoHS Status Compliant β€”
Lead-Free Yes Yes
Drain-to-Source Voltage (V_DSS) β€” 75 V
Continuous Drain Current (I_D) at T_C = 25 C β€” 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) β€” 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C β€” 470 W
Total Gate Charge (Q_g) β€” 410 nC
Maximum Junction Operating Temperature β€” +175 C
Package / Mounting Type β€” TO-247AC (Through Hole)
Pin Count β€” 3 (Gate, Drain, Source)
RoHS Compliance β€” Yes (Pb-free)
Avalanche Rated β€” Yes (repetitive avalanche rated)
Body Diode β€” Integral (no external anti-parallel diode required)

Datasheets & Resources

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