IRF7313TRPBF vs IRF7309TRPBF 비교

다음의 상세 나란히 비교: IRF7313TRPBF 제조: Infineon 및 IRF7309TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7313TRPBF IRF7309TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.27 $0.35
Manufacturer Infineon (formerly International Rectifier) —
Part Number IRF7313TRPBF —
Technology IR MOSFET Generation V (HEXFET Fifth Generation) IR HEXFET Generation V
Transistor Configuration Dual N-Channel (Independent) —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) max 6.5 A per channel —
On-Resistance (RDS(on)) max 29 mOhm at VGS=10V —
Power Dissipation (PD) max 2 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (typical range) [DATA_NEEDED: typical VGS(th) value]
동작 온도 범위 -55C to +150C (junction) -55C to +150C (TJ)
패키지 8-pin SOIC (SO-8) surface mount 8-SO (SOIC-8)
실장 유형 Surface Mount Surface Mount
Lead-Free / Pbf Yes (lead-free plating) —
Avalanche Rated Yes —
MSL 레벨 1 MSL-1 (unlimited floor life per JEDEC J-STD-020)
Qualification Standard Consumer market (per IR datasheet) —
Shipping Media Tape & Reel (TRPBF suffix) —
Configuration — Dual N-Channel + P-Channel (Complementary)
Polarity — N+P
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (N-channel, TA=25C) — 4 A
Continuous Drain Current (P-channel, TA=25C) — 3 A
On-Resistance (N-channel, max) — 50 mOhm
On-Resistance (P-channel, max) — [DATA_NEEDED: RDS(on) P-channel value]
Power Dissipation (TA=25C) — 1.4 W
Lead-Free Status — Yes (TRPBF suffix = Pb-free)
RoHS 상태 — Compliant
Packaging — Tape & Reel

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