IRF7313TRPBF vs IRF7907TRPBF 비교

다음의 상세 나란히 비교: IRF7313TRPBF 제조: Infineon 및 IRF7907TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7313TRPBF IRF7907TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.27 $0.43
Manufacturer Infineon (formerly International Rectifier) —
Part Number IRF7313TRPBF —
Technology IR MOSFET Generation V (HEXFET Fifth Generation) IR MOSFET (Infineon hexfet-style trench)
Transistor Configuration Dual N-Channel (Independent) —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) max 6.5 A per channel —
On-Resistance (RDS(on)) max 29 mOhm at VGS=10V —
Power Dissipation (PD) max 2 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (typical range) —
동작 온도 범위 -55C to +150C (junction) -55 C to +150 C
패키지 8-pin SOIC (SO-8) surface mount 8-SOIC (SO-8)
실장 유형 Surface Mount Surface Mount
Lead-Free / Pbf Yes (lead-free plating) —
Avalanche Rated Yes —
MSL 레벨 1 —
Qualification Standard Consumer market (per IR datasheet) —
Shipping Media Tape & Reel (TRPBF suffix) —
Configuration — Dual N-Channel MOSFET Array
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) Max — 9.1 A per channel at 25 C
Pulsed Drain Current (IDM) Max — 11 A
On-Resistance (RDS(on)) Max — 11.8 mOhm at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) — 1.35 V (typ)
Total Power Dissipation (PD) Max — 2 W
Lead-Free Status — Yes (PBF suffix)
Packaging — Tape & Reel (TR)
RoHS 상태 — Compliant
Channel Polarity — N-Channel (both)

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