IRF7343TRPBF vs IRF7313TRPBF 비교

다음의 상세 나란히 비교: IRF7343TRPBF 제조: Infineon 및 IRF7313TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7343TRPBF IRF7313TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.62 $0.27
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon (formerly International Rectifier)
Part Status Active —
트랜지스터 유형 N and P-Channel Complementary MOSFET Array —
Technology IR MOSFET (HEXFET Generation V) IR MOSFET Generation V (HEXFET Fifth Generation)
Drain-to-Source Voltage (VDS) - N-Channel 55 V —
Drain-to-Source Voltage (VDS) - P-Channel 55 V —
Continuous Drain Current (ID) - N-Channel 4.7 A —
Continuous Drain Current (ID) - P-Channel 3.4 A —
On-Resistance (RDS(on)) - N-Channel 0.043 ohm (typical per chipdig.com) —
On-Resistance (RDS(on)) max 50 mOhm 29 mOhm at VGS=10V
Power Dissipation (PD) 2 W —
패키지 8-SOIC (SO-8) 8-pin SOIC (SO-8) surface mount
실장 유형 Surface Mount Surface Mount
Lead-Free Yes —
RoHS Compliance Compliant —
Part Number — IRF7313TRPBF
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (typical range)
동작 온도 범위 — -55C to +150C (junction)
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
MSL 레벨 — 1
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

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