IRF7832TRPBF vs BSC094N06LS5ATMA1 비교
다음의 상세 나란히 비교: IRF7832TRPBF 제조: Infineon 및 BSC094N06LS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF7832TRPBF | BSC094N06LS5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.92 | $0.38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRF7832TRPBF | BSC094N06LS5ATMA1 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (trench MOSFET) | OptiMOS™ 5 (logic-level) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | 4.0 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) typical | 1.0 V to 2.5 V | — |
| Total Gate Charge (Qg) typical | 34 nC | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 동작 온도 범위 | -55 C to +150 C (TJ) | — |
| 패키지 | 8-SO (SOIC-8) | PG-TDSON-8-6 (SuperSO8 5x6) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS=10 V | — | 9.4 mΩ |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25°C | — | 36 W |
| 동작 접합 온도 | — | -55 °C to +150 °C |