IRF8736PBF vs IRF7832TRPBF 비교
다음의 상세 나란히 비교: IRF8736PBF 제조: Infineon 및 IRF7832TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF8736PBF | IRF7832TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.45 | $0.92 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TA=70°C | [DATA_NEEDED: ID at TA=70°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) at VGS=10V | 4.8 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | 6.0 mΩ (typical) | — |
| Gate-Source Threshold Voltage VGS(th) | Logic-level (optimized for 5 V drive) | — |
| Total Gate Charge Qg | 17 nC (typical) | — |
| Maximum Power Dissipation at TA=25°C | 2.5 W | — |
| 동작 온도 범위 | -55°C to +150°C (junction) | -55 C to +150 C (TJ) |
| 패키지 | SO-8 (8-SO) | 8-SO (SOIC-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 1 (Unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS / Lead-Free | Lead-Free, RoHS3 Compliant | — |
| Qualification Standard | JEDEC | — |
| Avalanche Rated | Yes (fully characterized avalanche voltage and current) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7832TRPBF |
| FET Type | — | N-Channel |
| Technology | — | HEXFET (trench MOSFET) |
| Continuous Drain Current (ID) at TA=25C | — | 20 A |
| On-Resistance RDS(on) max at VGS=10V | — | 4.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typical | — | 1.0 V to 2.5 V |
| Total Gate Charge (Qg) typical | — | 34 nC |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| RoHS 상태 | — | Compliant |
| Lead-Free | — | Yes |