IRFB3306PBF vs IRFB3207ZPBF 비교

다음의 상세 나란히 비교: IRFB3306PBF 제조: Infineon 및 IRFB3207ZPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFB3306PBF IRFB3207ZPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.05 $1.62
FET Type N-Channel —
Technology IR HEXFET (MOSFET) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) at Tc=25°C 120 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (Vgs) max ±20 V —
Rds(on) max @ Vgs=10V 4.2 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) typ [DATA_NEEDED: total gate charge Qg] —
Gate-Drain Charge (Qgd) typ 26 nC (nominal) —
Power Dissipation (Pd) at Tc=25°C 230 W —
동작 접합 온도 -55°C to +175°C -55 C to +175 C
패키지 TO-220AB (through-hole) TO-220AB (3-lead through-hole)
실장 유형 Through Hole Through Hole
RoHS / Lead-Free (PbF) Yes (PbF suffix indicates lead-free, RoHS compliant) —
Avalanche Rated Yes Yes (improved Z-variant ruggedness)
Body Diode Intrinsic (avalanche-rated) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFB3207ZPBF
Series — HEXFET
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
MSL 레벨 — N/A (through-hole)

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