IRFB3306PBF vs IRFB3207ZPBF Сравнение
Подробное сравнение бок о бок IRFB3306PBF от Infineon и IRFB3207ZPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRFB3306PBF | IRFB3207ZPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,05 | $1,62 |
| FET Type | N-Channel | — |
| Technology | IR HEXFET (MOSFET) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25°C | 120 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (Vgs) max | ±20 V | — |
| Rds(on) max @ Vgs=10V | 4.2 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge Qg] | — |
| Gate-Drain Charge (Qgd) typ | 26 nC (nominal) | — |
| Power Dissipation (Pd) at Tc=25°C | 230 W | — |
| Рабочая температура перехода | -55°C to +175°C | -55 C to +175 C |
| Корпус | TO-220AB (through-hole) | TO-220AB (3-lead through-hole) |
| Тип монтажа | Through Hole | Through Hole |
| RoHS / Lead-Free (PbF) | Yes (PbF suffix indicates lead-free, RoHS compliant) | — |
| Avalanche Rated | Yes | Yes (improved Z-variant ruggedness) |
| Body Diode | Intrinsic (avalanche-rated) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Уровень MSL | — | N/A (through-hole) |