IRFB7545PBF vs IPB019N08N3GATMA1 비교
다음의 상세 나란히 비교: IRFB7545PBF 제조: Infineon 및 IPB019N08N3GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFB7545PBF | IPB019N08N3GATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.95 | $2.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRFB7545PBF | — |
| Technology | StrongIRFET™ (HEXFET, N-Channel) | MOSFET (Metal Oxide) |
| Polarity | N-Channel | — |
| VDS (Drain-Source Voltage) max | 60 V | — |
| VGS (Gate-Source Voltage) max | ±20 V | — |
| RDS(on) max at VGS=10V | 5.9 mOhm | — |
| Continuous Drain Current (ID) at Tc=25C | 95 A | — |
| Pulsed Drain Current (IDM) | 380 A | — |
| Single-Pulse Avalanche Current (IAS) | 57 A | — |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| 동작 접합 온도 | -55C to +175C | — |
| 패키지 | TO-220AB (Through-Hole) | PG-TO263-7 (D2PAK-6, surface mount) |
| 실장 유형 | Through Hole (THT) | Surface Mount |
| Lead-Free / RoHS | Yes (Lead-Free, PBF suffix) | — |
| MSL 레벨 | N/A (Through-Hole) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Avalanche Energy Rated | Yes | — |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 80 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 180 A |
| Power Dissipation (Pd) @ Tc=25°C | — | 300 W |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.9 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V |
| Drive Voltage (Rds On Max) | — | 6 V, 10 V |
| Total Gate Charge (Qg) @ VGS=10V | — | 206 nC |
| Input Capacitance (Ciss) | — | 14.2 nF |
| Output Capacitance (Coss) | — | 3.84 nF |
| Reverse Transfer Capacitance (Crss) | — | 3.84 nF |
| 동작 온도 범위 | — | -55 °C to +175 °C |
| RoHS 상태 | — | Compliant |