IRFH5020TRPBF vs IRFH8201TRPBF 비교
다음의 상세 나란히 비교: IRFH5020TRPBF 제조: Infineon 및 IRFH8201TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFH5020TRPBF | IRFH8201TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.36 | $1.05 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Family | HEXFET Power MOSFET | — |
| FET Type | MOSFET N-Channel, Metal Oxide | N-Channel |
| Configuration | Single with built-in diode | — |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TA=25°C | 5.1 A | — |
| Pulsed Drain Current (IDM) | 63 A | 324 A |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=10V | 55 mΩ | 0.95 mOhm |
| Gate Charge (Qg) typ | 11 nC | — |
| Power Dissipation (TA=25°C) | 3.6 W | — |
| 전력 손실 (TC=25°C) | 8.3 W | — |
| Thermal Resistance, Junction-to-PCB (RthJB) | 0.8 °C/W | — |
| Package Type | 8-PQFN (5x6 mm) SuperSO8 | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Profile Height | ≤ 0.9 mm | — |
| 동작 온도 범위 | -55 °C to +150 °C (TJ max) | -55C to +150C |
| Qualification Standard | JEDEC (Normal level) | — |
| Gate Drive Optimization | 10 V VGS | — |
| RoHS Compliance | Compliant (Pb-free suffix PBF) | — |
| MSL 레벨 | 1 (per industry standard for PQFN-8) | [DATA_NEEDED: MSL level] |
| Technology | — | StrongIRFET (trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA=25C | — | 49 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Gate Threshold Voltage (VGS(th)) | — | 1.35 V max |
| Total Gate Charge (Qg) | — | 56 nC at VGS=10V |
| Output Capacitance (Coss) | — | 7.33 nF |
| Reverse Transfer Capacitance (Crss) | — | 850 pF |
| Power Dissipation (TA) | — | 3.6 W |
| Power Dissipation (TC) | — | 156 W |
| 패키지 | — | SuperSO8 5x6 (PQFN-8) with exposed pad |
| RoHS 상태 | — | Compliant |