IRFH5020TRPBF vs IRFH8201TRPBF Comparison
Detailed side-by-side comparison of IRFH5020TRPBF by Infineon and IRFH8201TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5020TRPBF
IRFH5020TRPBF - 200V 5.1A N-Channel HEXFET MOSFET | Infineon
IRFH5020TRPBF β ActiveInfineon
IRFH8201TRPBF
IRFH8201TRPBF - 25V N-Channel StrongIRFET MOSFET | Infineon
IRFH8201TRPBF β ActiveSpecification Comparison
| Parameter | IRFH5020TRPBF | IRFH8201TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $1.05 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Product Family | HEXFET Power MOSFET | β |
| FET Type | MOSFET N-Channel, Metal Oxide | N-Channel |
| Configuration | Single with built-in diode | β |
| Drain-to-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 5.1 A | β |
| Pulsed Drain Current (IDM) | 63 A | 324 A |
| Gate-to-Source Voltage (VGS) max | Β±20 V | β |
| RDS(on) max at VGS=10V | 55 mΞ© | 0.95 mOhm |
| Gate Charge (Qg) typ | 11 nC | β |
| Power Dissipation (TA=25Β°C) | 3.6 W | β |
| Power Dissipation (TC=25Β°C) | 8.3 W | β |
| Thermal Resistance, Junction-to-PCB (RthJB) | 0.8 Β°C/W | β |
| Package Type | 8-PQFN (5x6 mm) SuperSO8 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Profile Height | β€ 0.9 mm | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (TJ max) | -55C to +150C |
| Qualification Standard | JEDEC (Normal level) | β |
| Gate Drive Optimization | 10 V VGS | β |
| RoHS Compliance | Compliant (Pb-free suffix PBF) | β |
| MSL Level | 1 (per industry standard for PQFN-8) | [DATA_NEEDED: MSL level] |
| Technology | β | StrongIRFET (trench MOSFET) |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (ID) at TA=25C | β | 49 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Gate Threshold Voltage (VGS(th)) | β | 1.35 V max |
| Total Gate Charge (Qg) | β | 56 nC at VGS=10V |
| Output Capacitance (Coss) | β | 7.33 nF |
| Reverse Transfer Capacitance (Crss) | β | 850 pF |
| Power Dissipation (TA) | β | 3.6 W |
| Power Dissipation (TC) | β | 156 W |
| Package | β | SuperSO8 5x6 (PQFN-8) with exposed pad |
| RoHS Status | β | Compliant |