IRFR220NPBF vs IRFR2405TRPBF 비교
다음의 상세 나란히 비교: IRFR220NPBF 제조: Infineon 및 IRFR2405TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR220NPBF | IRFR2405TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.74 | $0.61 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC=25C | 5 A | — |
| Power Dissipation (PD) at TC=25C | 43 W | — |
| Static Drain-Source On-Resistance (RDS(on)) max | 0.6 ohm at VGS = 10 V | — |
| 실장 유형 | Surface Mount | Surface Mount |
| 패키지 / 케이스 | TO-252AA (DPAK) | — |
| Technology | HEXFET (Planar) | HEXFET (IR MOSFET) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 70 nC |
| 동작 온도 범위 | -55C to +150C (junction) | — |
| Lead-Free / RoHS | Yes, lead-free (PBF suffix) | — |
| Avalanche Energy Rated | Yes (per datasheet characterization) | — |
| 핀 수 | 3 (Gate, Drain, Source) plus tab | 3 (Gate, Drain, Source) + Tab |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | 1 |
| Manufacturer | — | Infineon Technologies |
| Part Status | — | Active |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 56 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) max at VGS=10V | — | 16 mOhm |
| On-Resistance RDS(on) max at VGS=5V | — | [DATA_NEEDED: RDS(on) at 5V] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| 동작 접합 온도 | — | -55C to +175C |
| 패키지 | — | TO-252AA (DPAK) |
| RoHS 상태 | — | Compliant (Lead-Free PBF suffix) |
| 할로겐 프리 | — | [DATA_NEEDED: halogen-free status] |
| Avalanche Rated | — | Yes (100% avalanche tested) |