IRFR2405TRPBF vs IRFR9120NTRPBF 비교
다음의 상세 나란히 비교: IRFR2405TRPBF 제조: Infineon 및 IRFR9120NTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR2405TRPBF | IRFR9120NTRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.61 | $0.32 |
| Manufacturer | Infineon Technologies | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET) | HEXFET fifth-generation IR MOSFET |
| Drain-Source Voltage (VDS) | 55 V | -100 V |
| Continuous Drain Current (ID) at Tc=25C | 56 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm | — |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at 5V] | — |
| Total Gate Charge (Qg) | 70 nC | 18 nC (typical) |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| 동작 접합 온도 | -55C to +175C | — |
| 패키지 | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 3 (Gate, Drain, Source) + Tab | — |
| MSL 레벨 | 1 | 1 (unlimited floor life) |
| RoHS 상태 | Compliant (Lead-Free PBF suffix) | Compliant |
| 할로겐 프리 | [DATA_NEEDED: halogen-free status] | — |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID) at TC=25C | — | -6.6 A |
| On-Resistance (RDS(on)) max at VGS=-10V | — | 480 milliohm |
| Continuous Power Dissipation (PD) at TC=25C | — | 40 W |
| 동작 접합 온도 범위 | — | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Lead Finish / Plating | — | Pb-free (PBF suffix), Matte Tin |
| Moisture Sensitivity | — | MSL1 per JEDEC J-STD-020 |