IRFR3806TRPBF vs IRFR220NTRLPBF 비교
다음의 상세 나란히 비교: IRFR3806TRPBF 제조: Infineon 및 IRFR220NTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR3806TRPBF | IRFR220NTRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.52 | $0.22 |
| Transistor Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc | 43 A | — |
| On-State Resistance RDS(on) max | 15.8 mOhm at VGS = 10 V | — |
| Total Gate Charge (Qg) | 22 nC | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (Pd) at Tc = 25 C | 71 W | — |
| 패키지 / 케이스 | TO-252AA (DPAK) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | — |
| 동작 온도 범위 | -55 C to +175 C | -55C to +150C (junction) |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Number of Units in IC | 1 | — |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Avalanche Rated | Yes (HEXFET family) | Yes (HEXFET ruggedized design) |
| Polarity | — | N-Channel |
| Mode | — | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 200 V |
| Continuous Drain Current (Id) at Tc=25C | — | 5 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.800 ohm (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate-to-Drain Charge (Qgd) | — | Low (per datasheet - HEXFET design) |
| Power Dissipation (Pd) at Tc=25C | — | 43 W |
| 패키지 | — | TO-252AA (DPAK), 2 Leads + Tab, SC-63 |
| MSL 레벨 | — | 1 |
| RoHS 상태 | — | Compliant (Pb-free PBF suffix) |
| Packaging | — | Tape & Reel (Left orientation - TRLPBF) |
| Technology Family | — | HEXFET, Planar, Generation 3 |