IRFR5505TRLPBF vs IRFR5505TRPBF 비교

다음의 상세 나란히 비교: IRFR5505TRLPBF 제조: Infineon 및 IRFR5505TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR5505TRLPBF IRFR5505TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.38 $0.48
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement —
VDS (Drain-Source Voltage) -55 V —
VGS (Gate-Source Voltage) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) -18 A (Tc) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] -72 A
On-Resistance RDS(on) max 110 mOhm (VGS = -10 V) —
Total Gate Charge (Qg) 21.3 nC 21.3 nC
Power Dissipation (PD) 57 W (Tc = 25 °C) —
동작 온도 범위 -55 °C to +175 °C —
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC] —
Technology IR MOSFET™ (HEXFET® generation 5) IR MOSFET (HEXFET 5th generation)
패키지 TO-252AA (DPAK), surface mount TO-252AA (DPAK), surface mount
실장 유형 Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) —
MSL 레벨 1 —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Series — HEXFET
Drain-Source Voltage (VDS) max — -55 V
Continuous Drain Current (ID) at TC=25C — -18 A
Gate-Source Voltage (VGS) max — +/-20 V
On-Resistance RDS(on) max at VGS=-10V — 110 mOhm
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Rise Time (tr) — [DATA_NEEDED: tr]
Fall Time (tf) — [DATA_NEEDED: tf]
Maximum Power Dissipation (PD) at TC=25C — 57 W
동작 접합 온도 — -55 C to +175 C
Thermal Resistance Junction-to-Case (RthJC) — 2.2 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 50 C/W (typical, DPAK on 1 oz copper)
RoHS 상태 — Compliant (PBF suffix)
Lead-Free — Yes (PBF suffix)

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