IRFZ48NSTRLPBF vs IRLR3410TRPBF 비교

다음의 상세 나란히 비교: IRFZ48NSTRLPBF 제조: Infineon 및 IRLR3410TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFZ48NSTRLPBF IRLR3410TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.18 $0.81
FET Type N-Channel Power MOSFET N-Channel
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) @ Tc=25C 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 54 nC 22.7 nC
Gate-to-Source Voltage (VGS) max ±20 V —
Power Dissipation (Pd) @ Tc=25C 130 W —
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W —
동작 접합 온도 -55C to +175C —
패키지 D2PAK (TO-263) Surface Mount TO-252AA (DPAK), surface mount
실장 유형 Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL) —
Lead Finish Lead-free (PBF) matte tin —
RoHS 상태 Compliant —
Technology Family HEXFET advanced process technology —
Technology — HEXFET (IR MOSFET, 5th generation)
Drain-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) at Tc=25C — 17 A
Power Dissipation (Pd) at Tc=25C — 79 W
On-Resistance RDS(on) max — 105 mOhm
Gate Threshold Voltage Vgs(th) — Logic-level (drive ~4.5V)
동작 온도 범위 — -55C to +175C (junction)
Lead-Free / RoHS — Yes (PBF suffix)
MSL 레벨 — 1 (unlimited floor life at <30C/85% RH)
Drain Tab Connection — Tab electrically tied to Drain
Polarity — N-Channel enhancement mode

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