IRLB8748PBF vs IRFR2405TRPBF 비교

다음의 상세 나란히 비교: IRLB8748PBF 제조: Infineon 및 IRFR2405TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRLB8748PBF IRFR2405TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.68 $0.61
Drain-Source Voltage (VDS) 30 V 55 V
Continuous Drain Current (ID) at TC=25C 92 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance RDS(on) max at VGS=10V 4.8 mOhm 16 mOhm
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max +/- 20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 15 nC typical 70 nC
Power Dissipation (PD) at TC=25C 75 W —
동작 온도 범위 -55C to +175C (junction) —
Package Type TO-220AB through-hole —
실장 유형 Through Hole Surface Mount
Technology Family StrongIRFET / HEXFET —
Channel Type N-Channel —
Logic-Level Gate Drive Yes (optimized for 5V VGS) —
RoHS 상태 Compliant (Pb-free PBF suffix) Compliant (Lead-Free PBF suffix)
Qualification Standard JEDEC (Industrial market per datasheet) —
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Technology — HEXFET (IR MOSFET)
Continuous Drain Current (ID) at Tc=25C — 56 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Power Dissipation (PD) at Tc=25C — 110 W
동작 접합 온도 — -55C to +175C
패키지 — TO-252AA (DPAK)
핀 수 — 3 (Gate, Drain, Source) + Tab
MSL 레벨 — 1
할로겐 프리 — [DATA_NEEDED: halogen-free status]
Avalanche Rated — Yes (100% avalanche tested)

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