IRLB8748PBF vs IRFR2405TRPBF Comparison

Detailed side-by-side comparison of IRLB8748PBF by Infineon and IRFR2405TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLB8748PBF IRFR2405TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Drain-Source Voltage (VDS) 30 V 55 V
Continuous Drain Current (ID) at TC=25C 92 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance RDS(on) max at VGS=10V 4.8 mOhm 16 mOhm
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max +/- 20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 15 nC typical 70 nC
Power Dissipation (PD) at TC=25C 75 W —
Operating Temperature Range -55C to +175C (junction) —
Package Type TO-220AB through-hole —
Mounting Type Through Hole Surface Mount
Technology Family StrongIRFET / HEXFET —
Channel Type N-Channel —
Logic-Level Gate Drive Yes (optimized for 5V VGS) —
RoHS Status Compliant (Pb-free PBF suffix) Compliant (Lead-Free PBF suffix)
Qualification Standard JEDEC (Industrial market per datasheet) —
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Technology — HEXFET (IR MOSFET)
Continuous Drain Current (ID) at Tc=25C — 56 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Power Dissipation (PD) at Tc=25C — 110 W
Operating Junction Temperature — -55C to +175C
Package — TO-252AA (DPAK)
Pin Count — 3 (Gate, Drain, Source) + Tab
MSL Level — 1
Halogen Free — [DATA_NEEDED: halogen-free status]
Avalanche Rated — Yes (100% avalanche tested)

Datasheets & Resources

Browse All Products Create BOM Request Quote