IRLR120NTRPBF vs IRFR220NTRLPBF 비교

다음의 상세 나란히 비교: IRLR120NTRPBF 제조: Infineon 및 IRFR220NTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF ✓ 활성

사양 비교

파라미터 IRLR120NTRPBF IRFR220NTRLPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.27 $0.22
FET Type N-Channel MOSFET —
Technology HEXFET (Fifth Generation, planar) —
Drain-to-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) at Tc=25C 10 A 5 A
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed Idm] [DATA_NEEDED: pulsed drain current]
Rds(on) Max at Vgs=10V 185 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Total Gate Charge (Qg) 13.3 nC [DATA_NEEDED: total gate charge Qg]
Power Dissipation (Pd) at Tc=25C 48 W 43 W
동작 온도 범위 -55C to +175C (junction) -55C to +150C (junction)
패키지 TO-252AA (DPAK), 3-pin surface mount TO-252AA (DPAK), 2 Leads + Tab, SC-63
실장 유형 Surface Mount Surface Mount
Avalanche Energy Rating Fully avalanche rated —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
MSL 레벨 1 1
Polarity — N-Channel
Mode — Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) — 200 V
Static Drain-Source On-Resistance (RDS(on)) — 0.800 ohm (max)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate-to-Drain Charge (Qgd) — Low (per datasheet - HEXFET design)
RoHS 상태 — Compliant (Pb-free PBF suffix)
Packaging — Tape & Reel (Left orientation - TRLPBF)
Avalanche Rated — Yes (HEXFET ruggedized design)
Technology Family — HEXFET, Planar, Generation 3

데이터시트 & 자료

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