IRLU024NPBF vs IRFR3710ZTRPBF 비교
다음의 상세 나란히 비교: IRLU024NPBF 제조: Infineon 및 IRFR3710ZTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRLU024NPBF | IRFR3710ZTRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.61 | $0.42 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLU024NPBF | — |
| FET Type | N-Channel, Logic-Level | N-Channel |
| Technology | HEXFET Power MOSFET (5th generation) | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 17 A | 56 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed IDM] |
| On-Resistance RDS(on) max at VGS=10V | 65 mOhm | — |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Total Gate Charge (Qg) | 10 nC (typical, per listing) | — |
| Power Dissipation (PD) at TC=25C | 45 W | 140 W |
| Thermal Resistance Junction-to-Case (RthJC) | 3.3 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 110 C/W (50 C/W PCB-mounted) | — |
| 동작 접합 온도 | -55C to +175C | -55C to +175C |
| 패키지 | IPAK (TO-251AA), Through Hole | TO-252AA (DPAK) |
| 실장 유형 | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free plating) | — |
| Qualification | JEDEC standard | — |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 18 mOhm |
| RoHS 상태 | — | Compliant |
| Lead-Free | — | Yes |