IRLU024NPBF vs IRFR3710ZTRPBF Comparison
Detailed side-by-side comparison of IRLU024NPBF by Infineon and IRFR3710ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRLU024NPBF
IRLU024NPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
IRLU024NPBF β Active
Specification Comparison
| Parameter | IRLU024NPBF | IRFR3710ZTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.42 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRLU024NPBF | β |
| FET Type | N-Channel, Logic-Level | N-Channel |
| Technology | HEXFET Power MOSFET (5th generation) | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at TC=25C | 17 A | 56 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed IDM] |
| On-Resistance RDS(on) max at VGS=10V | 65 mOhm | β |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | β |
| Total Gate Charge (Qg) | 10 nC (typical, per listing) | β |
| Power Dissipation (PD) at TC=25C | 45 W | 140 W |
| Thermal Resistance Junction-to-Case (RthJC) | 3.3 C/W | β |
| Thermal Resistance Junction-to-Ambient (RthJA) | 110 C/W (50 C/W PCB-mounted) | β |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Package | IPAK (TO-251AA), Through Hole | TO-252AA (DPAK) |
| Mounting Type | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free plating) | β |
| Qualification | JEDEC standard | β |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | β |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | β | 18 mOhm |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |