IRLU024NPBF vs IRFR3710ZTRPBF Comparison

Detailed side-by-side comparison of IRLU024NPBF by Infineon and IRFR3710ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLU024NPBF IRFR3710ZTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLU024NPBF —
FET Type N-Channel, Logic-Level N-Channel
Technology HEXFET Power MOSFET (5th generation) HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 17 A 56 A
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed IDM]
On-Resistance RDS(on) max at VGS=10V 65 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) min/typ/max] —
Total Gate Charge (Qg) 10 nC (typical, per listing) —
Power Dissipation (PD) at TC=25C 45 W 140 W
Thermal Resistance Junction-to-Case (RthJC) 3.3 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 110 C/W (50 C/W PCB-mounted) —
Operating Junction Temperature -55C to +175C -55C to +175C
Package IPAK (TO-251AA), Through Hole TO-252AA (DPAK)
Mounting Type Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix indicates lead-free plating) —
Qualification JEDEC standard —
Gate Drive Voltage (optimized) 10 V (capable of 4.5 V) —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V — 18 mOhm
RoHS Status — Compliant
Lead-Free — Yes

Datasheets & Resources

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