IRS21091STRPBF vs IRS21867STRPBF 비교

다음의 상세 나란히 비교: IRS21091STRPBF 제조: Infineon 및 IRS21867STRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRS21091STRPBF IRS21867STRPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.65 $1.55
Configuration Half-Bridge —
Number of Drivers 2 —
Driven Channels High-Side and Low-Side, Synchronous —
Gate Type IGBT, N-Channel MOSFET —
Logic Input Compatibility CMOS or LSTTL, down to 3.3 V —
Output Polarity Non-Inverting —
Supply Voltage (VCC) 10 V to 20 V —
Floating Channel Offset Voltage up to +600 V —
Negative Transient Tolerance Yes, dV/dt immune —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.6 A —
Propagation Delay (typ.) 750 ns —
Deadtime Control Programmable —
Shutdown Pin Yes —
패키지 8-SOIC (0.154", 3.90 mm width) 8-SOIC (SOIC-8, 8-pin SOIC N T/R)
Packaging Tape & Reel —
RoHS 상태 Compliant Compliant
토폴로지 — High-Side and Low-Side (Half-Bridge)
Offset Voltage (High-Side, max) — 600 V
Output Current (Source/Sink, typical) — 4 A / 4 A
Supply Voltage VCC — 10 V to 20 V
Bootstrap Supply VBS — up to VCC + 600 V (floating)
Input Logic Compatibility — 3.3 V and 5 V CMOS / TTL
Rise Time (typ, 1 nF load) — 22 ns
Fall Time (typ, 1 nF load) — 18 ns
Turn-On Propagation Delay (typ) — 170 ns
Turn-Off Propagation Delay (typ) — 170 ns
Undervoltage Lockout — Yes (VCC and VBS)
Operating Temperature Range (TJ) — -40C to +150C
실장 유형 — Surface Mount
MSL 레벨 — 2
Lead-Free Status — Lead Free
Channel Count — 2 (1 high-side + 1 low-side)
Input Type — Non-Inverting (HIN, LIN)

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청