ISC060N10NM6ATMA1 vs BSC123N08NS3GATMA1 비교

다음의 상세 나란히 비교: ISC060N10NM6ATMA1 제조: Infineon 및 BSC123N08NS3GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon

BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon

BSC123N08NS3GATMA1 ✓ 활성

사양 비교

파라미터 ISC060N10NM6ATMA1 BSC123N08NS3GATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.43 $0.71
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 100 V —
트랜지스터 유형 N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Ta 15 A —
Continuous Drain Current (ID) at Tc 97 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance (RDS(on)) 6 mΩ at VGS = 10 V, ID = 25 A —
Gate-Source Threshold Voltage (VGS(th)) 3.3 V (typical) —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 125 W —
동작 온도 범위 -55 °C to +175 °C (TJ) —
패키지 PG-TDSON-8 FL (5.15 x 6.15 mm) PG-TDSON-8-1 (SuperSO8 5x6 mm)
실장 유형 Surface Mount Surface Mount
Technology OptiMOS 6 (thin-wafer trench) —
Polarity N-Channel —
RoHS 상태 Compliant Compliant with exemption
MSL 레벨 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Part Family — OptiMOS 3
Channel Type — N-Channel
Configuration — Single with built-in body diode
Maximum Drain-Source Voltage (VDS) — 80 V
Maximum Continuous Drain Current (ID, Tc) — 55 A
Maximum Continuous Drain Current (ID, Ta) — 11 A
Maximum Pulsed Drain Current — [DATA_NEEDED: pulsed drain current]
Maximum RDS(on) @ VGS=10 V — 12.3 mOhm
Maximum Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation (Tc) — 66 W
Power Dissipation (Ta) — 2.5 W
동작 접합 온도 — -55C to +150C
Automotive Qualified — Yes (AEC-Q101)

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