ISCH57N04NM7VSCATMA1 vs IPC50N04S5L5R5ATMA1 비교

다음의 상세 나란히 비교: ISCH57N04NM7VSCATMA1 제조: Infineon 및 IPC50N04S5L5R5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 ISCH57N04NM7VSCATMA1 IPC50N04S5L5R5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.78 $0.36
FET Type N-Channel —
Technology OptiMOS 7 (trench) —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Ta 52 A —
Continuous Drain Current (ID) at Tc [DATA_NEEDED: ID at Tc value, datasheet not in verified data] —
Pulsed Drain Current (IDM) at Tc 443 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 214 W —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
동작 온도 범위 -55 C to +175 C (typical MOSFET junction range) -55 °C to +175 °C
패키지 PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
실장 유형 Surface Mount Surface Mount
Configuration Single N-channel, source-down lead-frame —
Cooling Dual Side Cooled (top + bottom thermal interface) —
RoHS 상태 Compliant —
트랜지스터 유형 — N-Channel MOSFET
Mode — Enhancement Mode
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

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