ISCH57N04NM7VSCATMA1 vs IPC50N04S5L5R5ATMA1 Comparison
Detailed side-by-side comparison of ISCH57N04NM7VSCATMA1 by Infineon and IPC50N04S5L5R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISCH57N04NM7VSCATMA1
ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
ISCH57N04NM7VSCATMA1 β ActiveInfineon
IPC50N04S5L5R5ATMA1
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΞ© OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 β ActiveSpecification Comparison
| Parameter | ISCH57N04NM7VSCATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.36 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 7 (trench) | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 52 A | β |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc value, datasheet not in verified data] | β |
| Pulsed Drain Current (IDM) at Tc | 443 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 214 W | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Operating Temperature Range | -55 C to +175 C (typical MOSFET junction range) | -55 Β°C to +175 Β°C |
| Package | PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-channel, source-down lead-frame | β |
| Cooling | Dual Side Cooled (top + bottom thermal interface) | β |
| RoHS Status | Compliant | β |
| Transistor Type | β | N-Channel MOSFET |
| Mode | β | Enhancement Mode |
| Continuous Drain Current (ID, Tc) | β | 50 A |
| Maximum Drain Current (silicon-limited, 25 Β°C) | β | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | β | 5.5 mΞ© |
| Gate Threshold VGS(th) | β | Logic Level (enhancement at β€ 4.5 V VGS) |
| Power Dissipation (Tc) | β | 42 W |
| Thermal Resistance Junction-to-Case RthJC | β | 3.6 K/W |
| AEC-Q101 Qualification | β | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | β | MSL1 |
| Peak Reflow Temperature | β | 260 Β°C |
| Avalanche Rating | β | 100 % Avalanche Tested |
| RoHS / REACH | β | RoHS Compliant (Green Product) |