ISZ019N03L5SATMA1 vs ISK057N04LM6ATSA1 비교

다음의 상세 나란히 비교: ISZ019N03L5SATMA1 제조: Infineon 및 ISK057N04LM6ATSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
ISK057N04LM6ATSA1 ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 ✓ 활성

사양 비교

파라미터 ISZ019N03L5SATMA1 ISK057N04LM6ATSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.48 $0.30
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 (<= 40V) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at TA=25C 22 A —
Continuous Drain Current (ID) at TC=25C 40 A —
RDS(on) at VGS=10V 1.9 mΩ (typical, ID=20A) —
Gate Threshold Voltage (VGS(th)) 2 V (typical) 2.3 V (typ)
Gate-Source Voltage Rating (VGS) ±20 V —
Total Gate Charge (Qg) 44 nC at VGS=10V —
Input Capacitance (Ciss) 2800 pF at VDS=15V 870 pF
패키지 PG-TSDSON-8-FL (5x6 mm) PG-VSON-6-1 (PQFN 2x2 mm)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55C to +175C (TJ max) -55C to +150C
MSL 레벨 1 (per JEDEC J-STD-020) —
RoHS / REACH Compliant —
Avalanche Rated Yes —
RG-tested 100% —
Polarity — N-Channel
Gate-Source Voltage (VGS) Max — ±20 V
Continuous Drain Current (ID) at Ta=25C — 15 A
Continuous Drain Current (ID) at Tc=25C — 64 A
Power Dissipation (PD) at Ta — 2.1 W
Power Dissipation (PD) at Tc — 39.1 W
On-Resistance RDS(on) at VGS=10V — [DATA_NEEDED: typical RDS(on) at 10V]
On-Resistance RDS(on) at VGS=4.5V — 8.3 mOhm
Total Gate Charge (Qg) at VGS=10V — 12 nC
Output Capacitance (Coss) — 290 pF
Reverse Transfer Capacitance (Crss) — 21 pF
RoHS 상태 — Compliant
Technology — OptiMOS 6 Trench

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