ISZ019N03L5SATMA1 vs ISK057N04LM6ATSA1 Comparison
Detailed side-by-side comparison of ISZ019N03L5SATMA1 by Infineon and ISK057N04LM6ATSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ019N03L5SATMA1 - 30V 1.9mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 β ActiveInfineon
ISK057N04LM6ATSA1
ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1
ISK057N04LM6ATSA1 β ActiveSpecification Comparison
| Parameter | ISZ019N03L5SATMA1 | ISK057N04LM6ATSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.30 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 (<= 40V) | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 22 A | β |
| Continuous Drain Current (ID) at TC=25C | 40 A | β |
| RDS(on) at VGS=10V | 1.9 mΞ© (typical, ID=20A) | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | 2.3 V (typ) |
| Gate-Source Voltage Rating (VGS) | Β±20 V | β |
| Total Gate Charge (Qg) | 44 nC at VGS=10V | β |
| Input Capacitance (Ciss) | 2800 pF at VDS=15V | 870 pF |
| Package | PG-TSDSON-8-FL (5x6 mm) | PG-VSON-6-1 (PQFN 2x2 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (TJ max) | -55C to +150C |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS / REACH | Compliant | β |
| Avalanche Rated | Yes | β |
| RG-tested | 100% | β |
| Polarity | β | N-Channel |
| Gate-Source Voltage (VGS) Max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta=25C | β | 15 A |
| Continuous Drain Current (ID) at Tc=25C | β | 64 A |
| Power Dissipation (PD) at Ta | β | 2.1 W |
| Power Dissipation (PD) at Tc | β | 39.1 W |
| On-Resistance RDS(on) at VGS=10V | β | [DATA_NEEDED: typical RDS(on) at 10V] |
| On-Resistance RDS(on) at VGS=4.5V | β | 8.3 mOhm |
| Total Gate Charge (Qg) at VGS=10V | β | 12 nC |
| Output Capacitance (Coss) | β | 290 pF |
| Reverse Transfer Capacitance (Crss) | β | 21 pF |
| RoHS Status | β | Compliant |
| Technology | β | OptiMOS 6 Trench |