K3KLALA0DM-JGCT - LPDDR5X DRAM x32 | Samsung Semiconductor
부품 번호: K3KLALA0DM-JGCT ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K3KLALA0DM-JGCT 개요
LPDDR5X is a premium low-power DRAM standard evolved from the LPDDR (Low Power Double Data Rate) lineage: LPDDR -> LPDDR4X -> LPDDR5 -> LPDDR5X. It belongs to the volatile memory -> DRAM -> synchronous DRAM hierarchy and serves as the main-system-memory workhorse in devices where bandwidth per watt is the dominant constraint. Unlike DDR5 DIMM memory used in servers, LPDDR5X is soldered directly onto the PCB as a discrete BGA package.
Key characteristics of this family include high-speed data processing (up to 8.5 Gbps on leading speed grades), aggressive power scaling with dynamic voltage/frequency switching, and deep sleep states that minimize standby current in battery-operated systems. The x32 organization provides wide parallelism that reduces bus clock requirements for a given aggregate bandwidth.
Architecturally, LPDDR5X extends LPDDR5 by operating the command/address and data interface at higher signaling rates with enhanced signal-integrity training, link ECC options, and refined DVFSC/DVFSP (dynamic voltage and frequency scaling center/point) features. Memory controllers must support the JEDEC LPDDR5X mode registers to exploit the extended speed bins.
Typical applications include flagship smartphone and tablet main memory, AI edge computing accelerators, automotive infotainment and ADAS domain controllers, and high-performance embedded systems.
Design consideration: LPDDR5X routing demands careful length matching, impedance control, and reference to the manufacturer's layout guidelines; controller and PHY compatibility with the exact speed bin must be verified before layout freeze.
This page synthesizes distributor sourcing data, same-family drop-in alternatives, and practical design notes not found in a single manufacturer datasheet.
드롭인 대체품: K3KLALA0DM-JGCT — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K3KLALA0DM-JGCT (동일 폼 팩터 및 풋프린트) — 차이점: Package, Density, Interface, Memory Type, Product Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K3KLALA0DM-MGCU
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K3KL9L90DM-JGCT
✅ 드롭인✓ 재고 있음
$65.18 / 개
데이터시트 보기 →K3KL8L80DM-JGCT
✅ 드롭인✓ 재고 있음
$80.7 / 개
데이터시트 보기 →K3KL2L20DM-JGCT
✅ 드롭인✓ 재고 있음
$20.8 / 개
데이터시트 보기 →K3KL9L90CM-MGCT
✅ 드롭인✓ 재고 있음
$36.91 / 개
데이터시트 보기 →K3KLALA0DM-JGCT 최대 정격 & 전기적 특성
| Manufacturer | Samsung Electronics |
| 메모리 유형 | LPDDR5X SDRAM |
| 메모리 구성 | x32 |
| Product Status | Mass Production |
| Family Max Data Rate | Up to 8.5 Gbps (LPDDR5X family) |
| Family Power Efficiency | Approx. 20% better than LPDDR5 |
| Family Max Density | Up to 64 GB (family) |
| 실장 유형 | Surface Mount |
| Standards Compliance | JEDEC LPDDR5X |
K3KLALA0DM-JGCT standard 핀 구성 가이드
K3KLALA0DM-JGCT(standard 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K3KLALA0DM-JGCT.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K3KLALA0DM-JGCT 적합 용도: 6 애플리케이션s: Flagship Smartphone Main Memory, AI Edge Computing Accelerators, Automotive Infotainment and ADAS Domain Controllers, Tablets and 2-in-1 Mobile Computing, Networking and Edge Server Memory, High-Performance Embedded and Test Systems.
Flagship Smartphone Main Memory
The K3KLALA0DM-JGCT fits flagship smartphone SoC main memory where LPDDR5X bandwidth directly determines AI inference speed, camera pipeline throughput, and UI responsiveness. Samsung developed LPDDR5X specifically for IT and mobile flagship devices, with family data rates up to 8.5 Gbps and about 20% better power efficiency than LPDDR5, translating into longer battery life under identical workloads. The x32 organization provides wide parallelism that lowers the required bus clock for a given aggregate bandwidth, easing signal-integrity margins inside densely routed smartphone PCBs. In a typical design, the LPDDR5X is placed close to the application processor on a short fly-by bus with tightly length-matched byte lanes and dense VDDQ decoupling. Power-wise, dynamic voltage and frequency scaling lets the memory idle at reduced VDD, cutting standby drain during screen-off periods - a quantified benefit for daily-use battery endurance.
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AI Edge Computing Accelerators
Edge AI modules and NPUs are memory-bandwidth bound: model weights and activation buffers stream continuously from DRAM, so LPDDR5X bandwidth directly sets tokens-per-second and frames-per-second figures. The K3KLALA0DM-JGCT's LPDDR5X interface - with family speeds up to 8.5 Gbps per pin and x32 organization - supplies the high aggregate bandwidth that edge accelerators need without the power budget of GDDR or HBM. Samsung's LPDDR5X family targets exactly this class of IT-industry premium compute. Integration typically places one or two LPDDR5X packages beside the accelerator SoC on a short, impedance-controlled bus; the memory controller's read/write training compensates trace skew at each speed bin. Compared with stacking multiple LPDDR5 dies, a single LPDDR5X package reduces routing layers and board area, while deep power-down states cut idle consumption between inference bursts - meaningful for always-on camera analytics and voice assistants.
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Automotive Infotainment and ADAS Domain Controllers
Samsung explicitly positions LPDDR5X for IT industry and automotive devices, making the K3KLALA0DM-JGCT a candidate for cockpit domain controllers, surround-view ADAS processors, and centralized computing platforms that juggle multiple camera streams and 3D displays. The family's 8.5 Gbps-class bandwidth sustains multi-sensor fusion workloads, while the roughly 20% efficiency improvement over LPDDR5 reduces heat dissipation inside sealed, fanless automotive enclosures - a concrete thermal benefit. In-vehicle designs typically pair the LPDDR5X with an automotive SoC over a short point-to-point bus; vibration-rated solder joints and extended-temperature handling must be verified for the specific suffix code. Designers should confirm AEC-Q100 qualification status for the exact ordering code before safety-critical deployment, since standard commercial LPDDR5X parts are not automatically automotive qualified. Where qualification is confirmed, LPDDR5X delivers the highest memory bandwidth-per-watt available for zone controllers.
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Tablets and 2-in-1 Mobile Computing
Premium tablets and 2-in-1 convertibles use LPDDR5X as unified system memory for the SoC, GPU, and ISP, and the K3KLALA0DM-JGCT's x32 organization provides the wide, fast memory fabric these workloads demand. Samsung's LPDDR5X family spans densities up to 64 GB, letting tablet platforms scale RAM SKUs from a single footprint. The 8.5 Gbps-class data rates keep large-resolution displays, multi-layer photo editing, and on-device AI features fluid, while the family's improved power efficiency over LPDDR5 extends battery runtime under sustained load - a headline spec for mobile computing. Thermal design benefits too: lower DRAM power reduces skin-temperature hotspots near the memory, avoiding throttling. Layout practice places the package on the opposite PCB side from the SoC or in a tightly coupled cluster, with byte-lane length matching and reference-plane integrity maintained to the LPDDR5X speed bin selected.
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Networking and Edge Server Memory
High-throughput networking appliances - 5G small-cell baseband units, edge gateways, and microservers - increasingly adopt LPDDR5X instead of DDR4 SODIMMs to gain bandwidth while shrinking power draw. The K3KLALA0DM-JGCT's LPDDR5X x32 interface provides wide memory channels suitable for packet-buffering and forwarding-table workloads, and Samsung's family-level 8.5 Gbps data rates enable line-rate processing at multi-gigabit port speeds. Power efficiency matters at rack scale: the family's roughly 20% improvement over LPDDR5 compounds across many nodes into measurable opex savings. In these designs, LPDDR5X is soldered around the network SoC with fly-by routing; memory training at boot validates each speed bin. Compared with DDR5 DIMM solutions, the soldered LPDDR5X approach trades serviceability for lower profile, lower latency, and better energy per transferred bit - the preferred trade in sealed edge hardware deployed outdoors or in street cabinets.
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High-Performance Embedded and Test Systems
High-performance embedded systems - industrial vision controllers, medical imaging capture units, and protocol analyzers - need large streaming buffers that the K3KLALA0DM-JGCT supplies efficiently through its LPDDR5X x32 interface. Samsung's LPDDR5X family, with up to 8.5 Gbps family data rates and densities spanning to 64 GB, allows instrument designers to capture sustained multi-gigabit data streams into memory without resorting to power-hungry GDDR implementations. The mass-production status of this part supports long-lifecycle embedded programs with stable sourcing. Integration typically pairs the DRAM with an FPGA or application processor whose memory controller supports LPDDR5X training; x32 wide organization simplifies multi-channel buffering topologies. Designers should budget for the JGCT suffix's defined speed bin and validate RoHS and reliability documentation with the distributor. The payoff is higher sustained capture bandwidth per watt, directly increasing instrument measurement throughput and reducing cooling complexity in compact enclosures.
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추천 제품 요약
엔지니어링 참조 데이터: K3KLALA0DM-JGCT — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K3KLALA0DM-MGCU | K3KL9L90DM-JGCT | K3KL8L80DM-JGCT | K3KL9L90CM-MGCT |
|---|---|---|---|---|---|
| Package | FBGA (Samsung LPDDR5X package) | FBGA - same | FBGA - same | FBGA - same | FBGA - same family, suffix differs |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | LPDDR5X SDRAM | LPDDR5X SDRAM | LPDDR5X SDRAM | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Suffix / Handling Code | JGCT (JG speed/temp, CT packing) | MGCU | JGCT | JGCT | MGCT |
주요 차별점
- Highest die class within the same-family drop-in group (vs K3KL9L90DM-JGCT)
- Same-die second speed grade available (vs K3KLALA0DM-MGCU)
- LPDDR5X power efficiency advantage (vs Legacy LPDDR5/LPDDR4X parts)
설계 노트
LPDDR5X operation at multi-gigabit rates requires strict signal-integrity discipline. Route all data byte lanes as tightly length-matched groups with controlled single-ended impedance (nominally 40-55 ohm per JEDEC LPDDR5X practice), reference them to unbroken ground planes, and minimize via transitions on the data bus. Channel length between SoC and the K3KLALA0DM-JGCT should be kept as short as physically possible - ideally under 50 mm - and simulator-based eye analysis should be run at the chosen speed bin before layout freeze. Read/write training in the memory controller PHY will trim static skew, but it cannot recover from gross impedance discontinuities or crosstalk violations.
Provide separate, clean rails for VDD and VDDQ per the Samsung datasheet, decoupling VDDQ with a dense array of low-ESL 0201/0402 ceramic capacitors placed within a few millimeters of the ball field. LPDDR5X dynamic voltage and frequency scaling means rail load varies rapidly with workload; regulator transient response must keep VDDQ ripple within datasheet limits during burst traffic. Estimated: at multi-gigabit operation a single LPDDR5X package can draw hundreds of milliwatts, so plan power distribution and copper thickness accordingly rather than scaling from LPDDR4 budgets.
Do not substitute another LPDDR5X suffix code without verifying three items: density, speed grade bin, and package ball-map. Samsung suffix letters encode speed and packing; for example, the sibling K3KLALA0DM-MGCU shares the die but carries a different suffix, and the CM-suffix K3KL9L90CM-MGCT differs in package handling. Boot failures typically stem from a controller expecting a faster bin than the device supports. Always request the exact ordering-code datasheet from Samsung (often under NDA) and program the controller's device tree or strap settings to match the installed part.
규정 준수 정보
Compliance data was not stated in the verified web data for this exact ordering code. Samsung mobile DRAM is typically RoHS-compliant, but certification must be confirmed via the Samsung product page or a material declaration request.
