K9F6408Q0C vs K9F2808Q0B 비교

다음의 상세 나란히 비교: K9F6408Q0C 제조: Samsung Electronics 및 K9F2808Q0B 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Samsung Electronics
K9F6408Q0C K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics

K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics

K9F6408Q0C Obsolete
Samsung Electronics
K9F2808Q0B K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung

K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung

K9F2808Q0B ✗ 단종

사양 비교

파라미터 K9F6408Q0C K9F2808Q0B
브랜드 Samsung Electronics Samsung Electronics
카테고리 Memory ICs Memory ICs
수명 주기 상태 Obsolete 수명 종료
재고 상태 In Stock In Stock
단가 (USD) $1.31 $0.00
메모리 유형 NAND Flash (SLC) SLC NAND Flash (parallel)
Memory Capacity 64 Mbit (8 M x 8 bit main + 256 K x 8 bit spare) —
메모리 구성 8M x 8 16M x 8
인터페이스 Parallel, 8-bit multiplexed I/O 8-bit multiplexed address/data
Operating Voltage (VCC) 1.65 V to 1.95 V 1.7 V to 1.95 V
Access Time 10 us (read cycle, family listing) —
Page Size 528 bytes (512 data + 16 spare) [DATA_NEEDED: page size]
Temperature Grade C (commercial), i (industrial) C (commercial), I (industrial)
Package (HIB0 variant) 48-ball TBGA —
Package (family TBGA note) 9 mm x 11 mm 63-ball changed to 6 mm x 8.5 mm 48-ball —
실장 유형 Surface Mount Surface Mount
Spare Area 256K x 8 bit —
Control Signals CLE, ALE, CE, WE, RE, WP, R/B —
Bad Block Management Host-managed (marking in spare area) —
Endurance [DATA_NEEDED: program/erase cycles] —
동작 온도 [DATA_NEEDED: operating temperature range] —
RoHS 상태 [DATA_NEEDED: RoHS status] unknown
MSL 레벨 [DATA_NEEDED: moisture sensitivity level] —
Density — 128 Mbit
Read Access Speed — 50 ns
Cell Type — SLC (1 bit/cell)
패키지 — 63-pin TBGA
Block Size — [DATA_NEEDED: block size]
Typical Read Current (Icc1) — [DATA_NEEDED: Icc1]
Program/Erase Endurance — [DATA_NEEDED: endurance cycles]
Production Status — Mass production (per legacy datasheet); now EOL/obsolete

데이터시트 & 자료

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