K9HUGY8J5B-BCK0 vs K9JUGY8J5C-CCK0 비교
다음의 상세 나란히 비교: K9HUGY8J5B-BCK0 제조: Samsung Electronics 및 K9JUGY8J5C-CCK0 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | K9HUGY8J5B-BCK0 | K9JUGY8J5C-CCK0 |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $7.60 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9HUG (V-NAND flash) | — |
| 메모리 유형 | NAND Flash (3D V-NAND) | NAND Flash - V-NAND (TLC) |
| Density | [DATA_NEEDED: device density] | 1 Tb (128 GB) |
| Cell Type | [DATA_NEEDED: SLC/MLC/TLC/QLC] | TLC (Triple-Level Cell) |
| 메모리 구성 | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Bus Width | [DATA_NEEDED: x8 or x16] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range] | [DATA_NEEDED: VCCQ range] |
| 인터페이스 | [DATA_NEEDED: asynchronous/toggle DDR] | [DATA_NEEDED: toggle/ONFI mode] |
| Page Program Time | [DATA_NEEDED: tPROG] | — |
| Page Read Time | [DATA_NEEDED: tR] | — |
| Block Erase Time | [DATA_NEEDED: tBERS] | — |
| Endurance | [DATA_NEEDED: P/E cycles] | — |
| 패키지 | [DATA_NEEDED: package code, e.g. FBGA] | [DATA_NEEDED: BGA package code and dimensions] |
| 동작 온도 | [DATA_NEEDED: temperature range] | [DATA_NEEDED: temperature range] |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | [DATA_NEEDED: RoHS status] |
| Technology Generation | — | V6 (6th-gen V-NAND, 128-layer) |
| Read Latency | — | [DATA_NEEDED: tR] |
| Program Time | — | [DATA_NEEDED: tPROG] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: rated P/E cycles] |
| MSL 레벨 | — | [DATA_NEEDED: moisture sensitivity level] |