K9NUGY8R6B-CCQ0 vs K9JUGY8J5C-CCK0 비교
다음의 상세 나란히 비교: K9NUGY8R6B-CCQ0 제조: Samsung Electronics 및 K9JUGY8J5C-CCK0 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Samsung Electronics
K9NUGY8R6B-CCQ0 - 1Tb TLC V-NAND Flash | Samsung | SSD Storage
K9NUGY8R6B-CCQ0 ✓ 활성
사양 비교
| 파라미터 | K9NUGY8R6B-CCQ0 | K9JUGY8J5C-CCK0 |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $7.60 |
| 메모리 유형 | NAND Flash (V-NAND, 3D TLC) | NAND Flash - V-NAND (TLC) |
| Density | 1 Tb | 1 Tb (128 GB) |
| Cell Type | Triple-Level Cell (TLC) | TLC (Triple-Level Cell) |
| 패키지 | 176-ball FBGA (176L) | [DATA_NEEDED: BGA package code and dimensions] |
| 실장 유형 | Surface Mount (BGA) | Surface Mount |
| 공급 전압 | [DATA_NEEDED: VCC range] | — |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Data Retention | [DATA_NEEDED: retention] | — |
| Read Latency | [DATA_NEEDED: tR] | [DATA_NEEDED: tR] |
| 인터페이스 | Asynchronous / Toggle-mode NAND (per Samsung V-NAND protocol) | [DATA_NEEDED: toggle/ONFI mode] |
| ECC Requirement | External controller LDPC ECC required | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| RoHS 상태 | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Application Class | Consumer / Client / Enterprise SSD raw NAND | — |
| Manufacturer | — | Samsung Electronics |
| Technology Generation | — | V6 (6th-gen V-NAND, 128-layer) |
| 메모리 구성 | — | [DATA_NEEDED: page/block organization] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range] |
| Program Time | — | [DATA_NEEDED: tPROG] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: rated P/E cycles] |
| MSL 레벨 | — | [DATA_NEEDED: moisture sensitivity level] |