KLM8G1GEUF-B04Q057 vs KLM4G1FETE-B041 비교

다음의 상세 나란히 비교: KLM8G1GEUF-B04Q057 제조: Samsung Electronics 및 KLM4G1FETE-B041 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Samsung Electronics
KLM8G1GEUF-B04Q057 KLM8G1GEUF-B04Q057 - 8GB Automotive eMMC 5.1 | Samsung

KLM8G1GEUF-B04Q057 - 8GB Automotive eMMC 5.1 | Samsung

KLM8G1GEUF-B04Q057 ✓ 활성
Samsung Electronics
KLM4G1FETE-B041 KLM4G1FETE-B041 - 4GB eMMC 5.1 FBGA-153 | Samsung | Embedded Storage

KLM4G1FETE-B041 - 4GB eMMC 5.1 FBGA-153 | Samsung | Embedded Storage

KLM4G1FETE-B041 ✓ 활성

사양 비교

파라미터 KLM8G1GEUF-B04Q057 KLM4G1FETE-B041
브랜드 Samsung Electronics Samsung Electronics
카테고리 Memory ICs Memory ICs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $39.58 $6.56
메모리 유형 eMMC (embedded MultiMediaCard) eMMC (embedded MultiMediaCard)
Interface Standard eMMC 5.1 eMMC 5.1 (MMC protocol v5.1)
Capacity 8 GB —
NAND Type MLC (64Gb die) —
Max Interface Mode HS400 (200 MHz DDR) HS400
공급 전압 1.8 V / 3.3 V (VCCQ / VCC) —
동작 온도 -40C to +105C [DATA_NEEDED: operating temperature range]
Grade Automotive —
패키지 153-ball FBGA FBGA-153
실장 유형 Surface Mount Surface Mount (BGA)
Bus Width [DATA_NEEDED: bus width] —
Sequential Read Speed [DATA_NEEDED: sequential read speed] —
Sequential Write Speed [DATA_NEEDED: sequential write speed] —
Operating Voltage VCC [DATA_NEEDED: VCC range] —
RoHS 상태 Compliant (per JLCPCB listing: ROHS) [DATA_NEEDED: RoHS status]
Endurance Rating [DATA_NEEDED: endurance rating] —
Density — 4 GByte (32 Gbit NAND)
Memory Organization — 32 x 8
Memory Technology — NAND Flash
VCC (VDDF) Supply Voltage — 3 V (NAND area)
VCCQ (VDD) Supply Voltage — 1.8 V or 3 V dual supply
Enhanced Strobe — Supported (eMMC 5.1)
Controller — Integrated MMC controller with flash management
Width (Data Bus) — 8-bit
Manufacturer — Samsung Semiconductor, Inc.

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청