MPX2102DP vs MPX2102GVP 비교
다음의 상세 나란히 비교: MPX2102DP 제조: NXP Semiconductors 및 MPX2102GVP 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MPX2102DP | MPX2102GVP |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | Pressure Sensors | Pressure Sensors |
| 수명 주기 상태 | 최종 구매 | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $9.85 | $10.15 |
| 센서 유형 | Piezoresistive Pressure Sensor | — |
| Pressure Type | Differential (Dual Port) | Vented Gauge |
| Operating Pressure Range | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) | 0 to 14.5 PSI (0 to 100 kPa) |
| Full-Scale Output | 0 mV to 40 mV at 10 V excitation | — |
| Supply Voltage (Excitation) | 10 V typical (max specified separately) | — |
| Port Size | Male, 0.19" (4.93 mm) tube, Dual | Male 0.19 inch (4.93 mm) Tube |
| 동작 온도 범위 | -40 °C to +125 °C | — |
| Compensated Temperature Range | 0 °C to +85 °C | — |
| 패키지 / 케이스 | 4-SIP Module (Unibody) | — |
| Termination Style | Through-Hole PCB | Through-Hole PCB (4-SIP pins) |
| 출력 유형 | Analog Wheatstone Bridge (ratiometric mV) | Analog Wheatstone bridge, 0 mV to 40 mV at 10 V |
| Technology | On-chip Temperature Compensated Silicon | — |
| Linearity | [DATA_NEEDED: typical linearity %FS] | +/-0.25% full scale typical |
| Sensitivity | [DATA_NEEDED: mV/V typical] | 0.4 mV/kPa nominal (40 mV at 100 kPa, 10 V supply) |
| 실장 유형 | Through-Hole, Dual Vertical Port | — |
| Series | MPX2102 | — |
| Maximum Overload Pressure | — | [DATA_NEEDED: maximum overload pressure] |
| 공급 전압 | — | 10 V typical (10 V max) |
| 동작 온도 | — | 0 C to +85 C |
| Storage Temperature | — | -40 C to +125 C |
| Compensated Temperature | — | 0 C to +85 C |
| 패키지 | — | 4-SIP Top Port Module |
| Input / Reference Side | — | Vented (atmospheric reference) |
| Media Compatibility | — | Non-corrosive dry gases |
| MSL 레벨 | — | 1 (Unlimited) |
| REACH Status | — | REACH Unaffected |
| ECCN | — | EAR99 |
| HTSUS | — | 8541.59.0080 |