MPXC2011DT1 vs MPX10DP 비교

다음의 상세 나란히 비교: MPXC2011DT1 제조: NXP Semiconductors 및 MPX10DP 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MPXC2011DT1 MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP

MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP

MPXC2011DT1 ✓ 활성

사양 비교

파라미터 MPXC2011DT1 MPX10DP
브랜드 NXP Semiconductors STMicroelectronics
카테고리 Pressure Sensors Pressure Sensors
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $14.95 $6.09
Pressure Type Differential Differential
Operating Pressure Range 0 kPa to 10 kPa (0 PSI to 1.45 PSI) 0 kPa to 10 kPa (0 to 1.45 PSI)
Full-Scale Output 25 mV typical at 10 V excitation —
Sensitivity 2.5 mV/kPa typical —
Excitation Voltage 3 V DC to 10 V DC (10 V nominal) —
출력 유형 Analog Wheatstone bridge (ratiometric) Analog Wheatstone bridge (uncompensated)
패키지 4-SSIP Chip Pak module, side port —
Port Style Female, 3.25 mm (0.128 in) barbed side port —
Termination Style Through-hole PCB, 4 leads —
동작 온도 0 °C to +85 °C [DATA_NEEDED: operating temperature range]
Compensation On-chip temperature compensated and calibrated —
Technology Piezoresistive silicon strain gauge —
Module Dimensions 7.6 mm x 12.8 mm nominal —
실장 유형 Through-hole (PCB mount with side-port tubing) Through-Hole
RoHS 상태 [DATA_NEEDED: RoHS status not in web data] [DATA_NEEDED: RoHS status]
Maximum Overload Pressure — [DATA_NEEDED: maximum overload pressure]
Output Voltage Span — 0 mV to 35 mV at 3 V excitation
Supply Voltage (Excitation) — 3 V DC typical
Port Configuration — Dual male 0.19 in (4.93 mm) tube, axial
패키지 / 케이스 — 4-SIP Module
Bridge Impedance — [DATA_NEEDED: input/output bridge resistance]
Linearity — [DATA_NEEDED: linearity %FS]
Temperature Compensation — None (uncompensated)
Media Compatibility — Dry gases (non-corrosive)

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