MRF5S21100HSR5 vs MRF5S21130HSR5 비교

다음의 상세 나란히 비교: MRF5S21100HSR5 제조: NXP Semiconductors 및 MRF5S21130HSR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF5S21100HSR5 MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP

MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP

MRF5S21100HSR5 ✓ 활성
NXP Semiconductors
MRF5S21130HSR5 MRF5S21130HSR5 - 28W RF LDMOS 2.11-2.17GHz NI-880S | NXP

MRF5S21130HSR5 - 28W RF LDMOS 2.11-2.17GHz NI-880S | NXP

MRF5S21130HSR5 Obsolete

사양 비교

파라미터 MRF5S21100HSR5 MRF5S21130HSR5
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 Obsolete
재고 상태 In Stock In Stock
단가 (USD) $19.80 $33.40
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale, Motorola)
Part Status Active —
트랜지스터 유형 N-Channel RF Power MOSFET LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Technology LDMOS (Laterally Diffused MOS) —
Operating Frequency 2.16 GHz to 2.17 GHz 2.11 GHz to 2.17 GHz
Drain-to-Source Voltage (Vdss) Max 65 V —
Test Supply Voltage 28 V —
Output Power (Pout) 23 W (CW) —
Power Gain 13.5 dB (typical) 13.5 dB (typical)
Drain Current (Id) 1.05 A —
패키지 / 케이스 NI-780S (ceramic flange-mount) NI-880S ceramic
실장 유형 Chassis / Flange Mount (through-hole RF) Surface Mount (SMT) with ceramic body
동작 온도 범위 -40C to +150C (junction) —
RoHS 상태 [DATA_NEEDED: RoHS status from NXP product page] —
Lead-Free [DATA_NEEDED: lead-free finish] —
Part Number — MRF5S21130HSR5
Series — RF MOSFET Line / HV5
Test Voltage (Vdd) — 28 V
Test Current (Idq) — 1.2 A
Power Output (Pout) — 28 W (CW)
Drain-Source Voltage (Vdss Rated) — 65 V
Application — W-CDMA base station, TDMA/CDMA, multi-carrier amplifier
Status — Obsolete (last-time-buy windows closed at authorized distributors)
Tape and Reel Pack — R5 suffix = 500-piece reel
Orderable Lead-Free Status — [DATA_NEEDED: lead-free status from NXP PCN]

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