MRF6S18140HR5 vs MRF6S19140HR5 비교

다음의 상세 나란히 비교: MRF6S18140HR5 제조: NXP Semiconductors 및 MRF6S19140HR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF6S18140HR5 MRF6S18140HR5 - 29W RF Power LDMOS Transistor | NXP Semiconductors

MRF6S18140HR5 - 29W RF Power LDMOS Transistor | NXP Semiconductors

MRF6S18140HR5 ✓ 활성
NXP Semiconductors
MRF6S19140HR5 MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 ✓ 활성

사양 비교

파라미터 MRF6S18140HR5 MRF6S19140HR5
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $65.00 $82.40
트랜지스터 유형 LDMOS (RF Power MOSFET) N-Channel RF Power LDMOS
Technology LDMOS, N-Channel —
Frequency 1.88 GHz (test frequency) —
Test Voltage 28 V —
Test Current 1.2 A —
Power Gain 16 dB (typical at test condition) —
Output Power (P1dB) 29 W —
Voltage - Rated (Vdss max) 68 V —
Current Rating (leakage) 10 uA —
패키지 NI-880H-2L (ceramic flange mount) —
실장 유형 Chassis / Flange Mount Chassis / flange mount (bolt-down)
Configuration Single, internally input-matched —
Application N-CDMA, TDMA, CDMA, multicarrier amplifier base-station PA —
Operating Class Class AB —
Lead Free Status Lead Free / RoHS Compliant (per distributor listing) —
Manufacturer NXP USA Inc. (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Drain-Source Voltage (Vdss) — 68 V (max)
Operating Drain Voltage (typical) — 28 V
Pulsed Drain Current (Id) — 1.15 A
Output Power (Pout) — 29 W (CW or pulsed)
Operating Frequency — 1.93 GHz to 1.99 GHz
Small-Signal Gain — 16 dB (typical)
패키지 / 케이스 — NI-880H-2L ceramic flange
Process Technology — HV6 LDMOS
RoHS 상태 — [DATA_NEEDED: RoHS status]
Lead-Free — [DATA_NEEDED: lead-free status]
동작 온도 범위 — [DATA_NEEDED: operating temp range]
Channel-to-Flange Thermal Resistance — 0.45 C/W (estimated, datasheet figure)

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