MRF6S9130HR5 vs MRF6S9130HSR5 비교
다음의 상세 나란히 비교: MRF6S9130HR5 제조: NXP Semiconductors 및 MRF6S9130HSR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF6S9130HR5 | MRF6S9130HSR5 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 최종 구매 | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $21.90 | $65.00 |
| 트랜지스터 유형 | N-Channel Enhancement-Mode LDMOS | LDMOS (N-Channel) |
| Drain-Source Voltage Rating (VDS) | 68 V | — |
| Operating Drain Voltage (VDD) | 28 V typical | — |
| Test Frequency | 880 MHz | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Output Power (CW) | 27 W | — |
| Power Gain | 19.2 dB | — |
| Test Bias Current (IDQ) | 950 mA | — |
| 패키지 / 케이스 | NI-780H-2L (ceramic flange) | NI-780S |
| 실장 유형 | Chassis / Flange Mount | Chassis Mount / Flange |
| Technology | LDMOS (Laterally Diffused MOS) | RF Power MOSFET |
| Polarity | N-Channel | — |
| Mode | Enhancement Mode | — |
| Intended Applications | N-CDMA, GSM, GSM EDGE base-station amplifiers | — |
| Multi-Carrier Capable | Yes (MCA) | — |
| Lead Free Status | Lead Free | — |
| Replacement Note | MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3 per PCN12895 | — |
| Frequency | — | 880 MHz |
| Gain | — | 19.2 dB |
| Output Power (P1dB) | — | 27 W (CW) |
| Test Voltage (Vdd) | — | 28 V |
| Test Current (Idq) | — | 950 mA |
| Voltage Rated (Vdss) | — | 68 V |
| Supplier Device Package | — | NI-780S |
| Application | — | N-CDMA, GSM, GSM EDGE base station |
| RoHS 상태 | — | [DATA_NEEDED: verify against specific lot] |
| Lead Free | — | Yes (per NXP migration note) |
| Part Status | — | Obsolete - replaced by MRFE6S9130HSR5 (per PCN12895) |
| Manufacturer | — | NXP USA Inc. (formerly Freescale Semiconductor) |