RTAX2000D-CQ352B vs RTAX2000D-1CQ352V 비교
다음의 상세 나란히 비교: RTAX2000D-CQ352B 제조: Microsemi 및 RTAX2000D-1CQ352V 제조: Microchip Technology. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Microchip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ 활성사양 비교
| 파라미터 | RTAX2000D-CQ352B | RTAX2000D-1CQ352V |
|---|---|---|
| 브랜드 | Microsemi | Microchip Technology |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $3,100.00 | $3,950.00 |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | — |
| Equivalent System Gates | 2000000 | — |
| Logic Cells | 29568 | 29,568 |
| CLBs | 19712 | 19,712 |
| Core Supply Voltage | 1.5 V nominal (1.425 V to 1.575 V) | 1.425 V to 1.575 V (nominal 1.5 V) |
| Process Technology | CMOS antifuse | — |
| Configuration Type | One-time programmable antifuse, live at power-up | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC protection |
| Clocking Features | Segmentable clocks, chip-wide highway routing | — |
| Arithmetic Support | Carry logic | — |
| 패키지 | CQFP-352 ceramic quad flat pack | CQFP-352 (CQ352), ceramic |
| Screening / Speed Grade | B (burn-in screening); D suffix = tighter ICCA limits at 125C final test | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | — |
| Radiation Tolerance | Radiation-tolerant (TID/SEE per family datasheet) | — |
| RoHS 상태 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS Status] |
| 동작 온도 | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: Operating Temperature] |
| I/O Supply Voltage | [DATA_NEEDED: I/O Bank Supply Voltage] | — |
| Maximum User I/O | [DATA_NEEDED: Maximum User I/O Count] | — |
| Equivalent Gates | — | 2,000,000 |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Technology | — | Digital CMOS, antifuse (nonvolatile) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose | — | 200 krad (Si) |
| Configuration | — | Live at power-up, single-chip, no external configuration device |
| Speed Grade | — | -1 |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |