AIKB40N65DH5ATMA1 - 650V 40A TRENCHSTOP 5 IGBT | Infineon
부품 번호: AIKB40N65DH5ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $4.85 | $4.85 |
| 10 | $4.32 | $43.20 |
| 100 | $3.78 | $378.00 |
| 500 | $3.21 | $1,605.00 |
| 1,000 | $2.84 | $2,840.00 |
AIKB40N65DH5ATMA1 개요
An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that combines the high-input-impedance voltage control of a MOSFET with the high-current-density, low-saturation-voltage conduction of a bipolar junction transistor. Within the broader taxonomy, an IGBT belongs to the discrete semiconductor family, sits under the power-transistor hierarchy, and is the workhorse device for medium-to-high voltage (typically 600 V to 6500 V) switching converters, motor drives, and inductive heating systems. The TRENCHSTOP 5 generation specifically targets reduced VCE(sat) and switching losses relative to the prior TRENCHSTOP 4 platform.
Key specifications include a VCES rating of 650 V, a nominal collector current of 40 A, and an integrated RAPID 1 fast/soft co-pack diode that suppresses reverse-recovery-induced voltage overshoot. The device is qualified to AEC-Q101 for automotive use, supporting deployment in EV traction inverters, on-board chargers, and DC/DC converters. The D2PAK (PG-TO263-3-2) surface-mount package enables automated assembly and provides a low thermal-resistance path via its exposed die-attach pad.
The AIKB40N65DH5ATMA1 uses a non-punch-through (NPT) trench cell design with a sophisticated carrier profile, achieving a low VCE(sat) while maintaining a wide safe operating area. The co-packed RAPID 1 diode is optimized for soft reverse recovery, reducing EMI in hard-switched bridge topologies. Together, the matched IGBT/diode pair minimizes turn-on losses in the complementary switch by reducing peak reverse-recovery current.
Typical applications include EV charging infrastructure (on-board chargers and DC fast-charging stations), photovoltaic string inverters, uninterruptible power supplies (UPS), industrial motor drives, and induction cooking. The automotive-grade qualification makes the device particularly suitable for 400 V and 800 V electric-vehicle powertrain converters.
When designing with this device, pay close attention to gate-drive voltage (recommended +15 V on, 0 V or negative off) and gate resistance selection. A gate resistor of 5 ohm to 47 ohm typically balances switching loss against EMI. The D2PAK footprint requires substantial PCB copper area (typically 1 to 6 square inches of 2 oz copper) to keep junction temperature within safe limits.
This page synthesizes distributor pricing, drop-in cross-brand alternatives, and practical design notes not found on a single manufacturer or distributor page.
드롭인 대체품: AIKB40N65DH5ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: AIKB40N65DH5ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Technology, Collector-Emitter Voltage (VCES), Operating Junction Temperature, Package.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
AIKW40N65DH5
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
AIKB40N65DH5
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IKD15N60RFATMA1
✅ 드롭인✓ 재고 있음
$1.35 / 개
데이터시트 보기 →FGH40N65SMD-F085
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
STGB40H65DFB
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSC076N04NDATMA1
✅ 드롭인✓ 재고 있음
$0.82 / 개
데이터시트 보기 →AIKB40N65DH5ATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Part Number | AIKB40N65DH5ATMA1 |
| Technology | TRENCHSTOP 5 (Trench + Field-Stop) |
| 트랜지스터 유형 | IGBT NPT (Non-Punch-Through) |
| Collector-Emitter Voltage (VCES) | 650 V |
| Continuous Collector Current (IC) at TC=100C | 40 A |
| Pulsed Collector Current (ICM) | 74 A |
| Gate-Emitter Voltage (VGES) | +/-20 V |
| Co-packaged Diode | RAPID 1 fast and soft antiparallel diode |
| 패키지 | PG-TO263-3-2 (D2PAK, surface mount) |
| 실장 유형 | Surface Mount |
| 동작 온도 범위 | -40C to +175C (junction) |
| Automotive Qualification | AEC-Q101 qualified (TRENCHSTOP 5 AUTO) |
| RoHS 상태 | Compliant |
| Typical Applications | EV chargers, DC/AC converters, photovoltaic inverters, motor drives, induction cooking |
AIKB40N65DH5ATMA1 핀 구성
| 핀 1 | Gate (G) — Gate control input; drive with 15 V on, 0 V or negative off |
| 핀 2 | Collector (C) — Collector terminal; also tied to the metal tab (thermal pad) |
| 핀 3 | Emitter (E) — Emitter terminal; power and signal ground reference |
| 핀 TAB | Collector (tab) — Metal back tab; electrically connected to Collector pin 2; serves as thermal pad for PCB heatsinking |
Forward Bias 안전 동작 영역 (FBSOA) - AIKB40N65DH5
일반적인 애플리케이션
AIKB40N65DH5ATMA1 적합 용도: 6 애플리케이션s: EV On-Board Charger (OBC), Photovoltaic String Inverter, Industrial Motor Drive (VFD), Uninterruptible Power Supply (UPS), Induction Cooking / Induction Heating, Bidirectional EV DC/DC Converter.
EV On-Board Charger (OBC)
The AIKB40N65DH5ATMA1 fits the PFC boost stage and DC/DC primary side of an EV on-board charger operating on a 400 V rectified bus. Its 650 V VCES rating provides ample margin above the 400 V bus, while 40 A continuous IC handles 6.6 kW to 11 kW OBC power levels. The TRENCHSTOP 5 cell achieves low VCE(sat) at full load, reducing conduction loss during constant-current charge phases. The co-packaged RAPID 1 soft-recovery diode suppresses reverse-recovery-induced EMI in the hard-switched boost switch-node, simplifying EMC compliance. AEC-Q101 qualification supports the automotive reliability story.
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Photovoltaic String Inverter
The AIKB40N65DH5ATMA1 is well suited for the DC/AC inverter stage of residential and small-commercial photovoltaic string inverters in the 5 kW to 10 kW range. The 650 V VCES rating covers 600 V to 800 V DC-link designs derived from transformerless string topologies. The 40 A IC rating supports continuous operation at 5 kW to 8 kW output per phase leg, and the RAPID 1 co-pack diode minimizes diode reverse-recovery loss in the complementary IGBT of the half-bridge. AEC-Q101 qualification provides long-term reliability assurance for outdoor solar installations where junction temperature swings are large.
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Industrial Motor Drive (VFD)
The AIKB40N65DH5ATMA1 supports variable-frequency-drive inverter stages for industrial motors up to approximately 18 kW at 400 VAC. The 650 V VCES handles 480 V three-phase rectified bus with 1.4x line-voltage transient margin. The 40 A continuous IC and 74 A pulsed ICM rating accommodate motor inrush currents during acceleration. The PG-TO263-3-2 (D2PAK) package is suitable for surface-mount automated assembly and pairs well with D2PAK-geometry heatsinks. The RAPID 1 diode soft recovery reduces motor-bearing currents and EMI in the variable-frequency output stage.
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Uninterruptible Power Supply (UPS)
The AIKB40N65DH5ATMA1 is a strong fit for double-conversion UPS inverter legs in the 5 kVA to 15 kVA range. The 650 V VCES rating supports 220 VAC single-phase or 380 VAC three-phase rectified bus designs. The TRENCHSTOP 5 low VCE(sat) minimizes inverter conduction loss, directly improving online-mode efficiency and reducing cooling requirements in the UPS enclosure. The co-packaged RAPID 1 fast diode optimizes the freewheeling path during dead-time intervals, reducing total harmonic distortion in the inverter output waveform.
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Induction Cooking / Induction Heating
The AIKB40N65DH5ATMA1 fits single-ended quasi-resonant induction-heating topologies at cookware power levels up to approximately 3.6 kW. The 650 V VCES handles the resonant tank voltage overshoot that often reaches 2x the rectified mains. The 40 A IC rating accommodates the heavy resonant current, and TRENCHSTOP 5 technology delivers the fast switching needed for high-frequency (20 kHz to 75 kHz) tank operation. The soft co-pack diode reduces tank ringing and audible noise during zero-voltage-switching transitions, improving cookware compatibility.
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Bidirectional EV DC/DC Converter
The AIKB40N65DH5ATMA1 is well matched to the high-voltage side of a bidirectional 400 V to 800 V (or 800 V to 400 V) EV DC/DC converter used in traction powertrains. Its 650 V VCES supports 400 V bus rails, while 40 A IC ratings meet continuous power throughput of 15 kW to 20 kW for auxiliary battery charging. The AEC-Q101 automotive qualification and TRENCHSTOP 5 AUTO technology deliver the reliability required under the harsh automotive thermal-cycling environment. The co-packaged RAPID 1 diode simplifies synchronous-rectifier dead-time management on the high-voltage leg.
추천
추천 제품 요약
엔지니어링 참조 데이터: AIKB40N65DH5ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | AIKW40N65DH5 | AIKB40N65DH5 | FGH40N65SMD-F085 | STGB40H65DFB | IKD15N60RFATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | STMicroelectronics | Infineon Technologies |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same |
| VCES (Collector-Emitter Voltage) | 650 V | 650 V | 650 V | 650 V | 650 V | 600 V |
| Continuous IC at TC=100C | 40 A | 40 A | 40 A | 40 A | 40 A | 15 A |
| Technology | TRENCHSTOP 5 (NPT Trench) | TRENCHSTOP 5 | TRENCHSTOP 5 | Field Stop II | HB-series Trench | RC-H5 (Hard-switching) |
| Co-pack Diode | RAPID 1 (fast, soft recovery) | RAPID 1 | RAPID 1 | Ultrafast silicon | Ultrafast silicon | Co-pack diode |
| Automotive Qualification | AEC-Q101 (TRENCHSTOP 5 AUTO) | Standard grade (non-auto) | AEC-Q101 | AEC-Q101 (F085 suffix) | AEC-Q101 | AEC-Q101 |
주요 차별점
- Lower VCE(sat) than Field Stop II generation (vs FGH40N65SMD-F085 (onsemi))
- Softer co-pack diode for lower EMI (vs STGB40H65DFB (STMicroelectronics))
- Automotive-grade qualification on standard MPN (vs AIKW40N65DH5 (Infineon standard grade))
설계 노트
Estimated: at IC=40 A, VCE(sat)=1.65 V, conduction loss is approximately 66 W. The D2PAK (PG-TO263-3-2) thermal resistance from junction to ambient (theta_JA) on a 1-square-inch 2 oz copper pad is approximately 40 C/W, yielding a 65C junction-temperature rise above ambient at full load. For sustained full-load operation, attach an external heatsink or expand the PCB copper area to at least 6 square inches. Always monitor junction temperature in the final mechanical assembly.
The D2PAK metal tab is internally bonded to the collector, so the PCB copper pour under the tab is at collector potential. Use sufficient clearance (typically 1 mm minimum for 650 V pollution degree 2) between the collector pad and the gate/emitter traces. Place the gate-drive loop area to a minimum (gate resistor close to pin 1, gate-driver return directly to emitter pin 3) to suppress dv/dt-induced Miller turn-on and reduce common-mode EMI on the gate-drive path.
Common pitfalls when using the AIKB40N65DH5ATMA1: (1) driving the gate below the VGE(th) threshold of approximately 5 V during off state, which can cause shoot-through; (2) omitting the gate-emitter resistor (typically 10 kohm) which leaves the part susceptible to dv/dt-induced turn-on; (3) exceeding the maximum junction temperature of 175C - always compute total loss (Pconduction + Pswitching) and verify thermal margin; (4) using a non-isolated gate driver in a half-bridge without proper bootstrap supply design for the high-side switch.
규정 준수 정보
AEC-Q101 (automotive discrete) qualified per Infineon product page. Note: AEC-Q100 is the IC qualification standard; for discrete semiconductors the equivalent is AEC-Q101 - field reflects this convention. RoHS and lead-free confirmed by Infineon automotive discrete product family. Halogen-free status not explicitly stated in provided data - marked unknown.
