1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
부품 번호: 1EDN7116GXTMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.98 | $980.00 |
| 3,000 | $0.84 | $2,520.00 |
1EDN7116GXTMA1 개요
A gate driver IC (also called a MOSFET driver or GaN driver) is a power-management integrated circuit that sits between a low-power control signal (PWM from a digital controller) and the gate of a high-power switching transistor. In the broader system hierarchy, a gate driver is a PMIC (power management IC) that drives power semiconductors - MOSFETs, IGBTs, or GaN HEMTs - delivering the high transient current (amperes, not milliamperes) required to charge and discharge the gate capacitance in nanoseconds. Without a gate driver, a microcontroller's GPIO pin cannot switch a power FET quickly enough to avoid cross-conduction, ringing, or unacceptable switching losses. TDI (truly differential input) gate drivers like the 1EDN7116G add galvanic isolation behavior in the input stage, providing robust rejection of fast dV/dt transients up to 200 V/ns that occur on the switching node of a half-bridge.
Key features of the 1EDN7116GXTMA1 include: 200V maximum blocking voltage on the switch node (allowing safe operation with 150V rails or large transient overshoots), integrated 4.4V LDO regulator providing stable gate supply from a wider VCC range, separate source/sink outputs enabling independent turn-on and turn-off strength optimization, and 9 ns typical propagation delay matched between rising and falling edges for low-distortion PWM transfer. The IC operates from a single 4.5V to 5.5V supply, draws less than 1 mA quiescent current, and provides under-voltage lockout (UVLO) for both VCC and the gate rail to prevent partial-enhancement of the driven GaN device.
The driver uses Infineon's proprietary TDI input stage which floats the logic reference above the switch-node ground return, eliminating the need for a digital isolator in many low-side applications and enabling true differential PWM signaling over short distances. The integrated active Miller clamp pulls the gate hard-low during the off-state when an external gate-return is used, suppressing unwanted turn-on from dV/dt-induced Miller current. Source/sink currents are independently programmable via external resistors, giving the designer direct control over EMI versus switching-loss trade-offs.
Typical applications include 48V-to-point-of-load synchronous buck converters, totem-pole PFC front-ends using GaN switches, telecom 48V intermediate bus converters, Class-D audio amplifiers, and on-board charger modules for mild-hybrid EV traction systems. The 200V rating comfortably handles 100V-rated GaN devices in half-bridge configurations.
When laying out the PCB, keep the gate-drive loop (driver output → FET gate → FET source → driver ground return) to a surface area of less than 1 cm² to minimize parasitic inductance. Use a 1 nF high-frequency decoupling capacitor directly at the VCC pin and a 100 nF at the gate-rail output pin. Place the Miller-clamp bypass capacitor within 5 mm of the dedicated CLAMP pin to ensure its turn-on effectiveness at high dV/dt.
This page synthesizes distributor inventory, drop-in same-package alternatives, and practical high-frequency layout guidance not found in the manufacturer datasheet alone.
드롭인 대체품: 1EDN7116GXTMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: 1EDN7116GXTMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Function, Operating Temperature Range, Peak Sink Current, Peak Source Current.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
1EDN7126GXTMA1
✅ 드롭인✓ 재고 있음
$0.29 / 개
데이터시트 보기 →2EDN7534RXTMA1
✅ 드롭인✓ 재고 있음
$0.4 / 개
데이터시트 보기 →1EDN7136UXTSA1
✅ 드롭인✓ 재고 있음
$0.74 / 개
데이터시트 보기 →1EDN7550UXTSA1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
2EDN7533RXTMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.55 / 개
데이터시트 보기 →1EDN7116GXTMA1 최대 정격 & 전기적 특성
| 기능 | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Driver Configuration | Non-inverting, single low-side |
| Number of Drivers | 1 |
| Peak Source Current | 2 A (typ) |
| Peak Sink Current | 4 A (typ) |
| Input Type | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | 200 V (max) |
| Propagation Delay (Typ) | 9 ns |
| Rise Time (Typ) | 3 ns |
| Fall Time (Typ) | 3 ns |
| Quiescent Current (Typ) | 0.6 mA |
| Miller Clamp | Integrated, active |
| UVLO | Yes (VCC and gate-rail monitored) |
| 동작 온도 범위 | -40 °C to +125 °C |
| 패키지 | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| 실장 유형 | Surface Mount |
| MSL 레벨 | MSL3 |
| RoHS 상태 | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET |
1EDN7116GXTMA1 핀 구성
| 핀 1 | VCC — 5V logic supply input (4.5V to 5.5V) |
| 핀 2 | GND — Logic ground reference |
| 핀 3 | IN+ — Non-inverting PWM input |
| 핀 4 | IN- — Inverting PWM input (differential pair with IN+) |
| 핀 5 | OUT_S — Gate source-driver output |
| 핀 6 | CLAMP — Active Miller-clamp output |
| 핀 7 | VDRV — Gate-drive supply (regulated by internal LDO) |
| 핀 8 | OUT — Main gate-drive output (combined source/sink) |
| 핀 9 | BST — Bootstrap supply for high-side reference |
| 핀 10 | PGND — Power ground return for gate-drive loop |
일반적인 애플리케이션
1EDN7116GXTMA1 적합 용도: 7 애플리케이션s: 48V-to-PoL Synchronous Buck Converter, Totem-Pole PFC Front-End for Server SMPS, Telecom 48V Intermediate Bus Converter, Class-D Audio Amplifier Output Stage, On-Board Charger for Mild-Hybrid EV, Solar Microinverter DC-DC Stage, Industrial Motor Drive GaN Stage.
48V-to-PoL Synchronous Buck Converter
The 1EDN7116GXTMA1 is well-suited for 48V intermediate-bus synchronous buck converters where it drives 100V-rated GaN HEMTs in a half-bridge configuration. Its 200V switch-node blocking voltage tolerates the 48V bus plus transient overshoots, while its 9 ns propagation delay enables clean PWM transfer at switching frequencies above 500 kHz. The 4A sink current overcomes Miller-induced turn-on currents from the high-dV/dt switching node, eliminating the need for separate negative-bias supplies on the GaN gates. Compared to a Si-MOSFET driver like the IR2117, the 1EDN7116G adds differential TDI input that rejects common-mode noise without an external digital isolator.
추천
Totem-Pole PFC Front-End for Server SMPS
The 1EDN7116GXTMA1 drives the two low-side GaN HEMTs in a bridgeless totem-pole PFC topology at 100 kHz to 1 MHz switching frequencies. Its 200V switch-node blocking handles the 400V DC-link bus at universal mains input (85-264 VAC), and the 4A sink current prevents spurious turn-on during the line-frequency zero-crossing where dV/dt peaks at 50 V/ns. Compared to a SiC MOSFET driver, the 1EDN7116G's sub-10 ns propagation delay keeps the dead-time below 20 ns, achieving peak efficiencies above 99% in the EVAL_2EDN7524F reference design.
추천
Telecom 48V Intermediate Bus Converter
The 1EDN7116GXTMA1 fits 48V-input to point-of-load IBC stages used in hyperscale datacenters where bus voltages of 48V to 54V require 100V-rated switches. The driver's 200V blocking provides ample margin against ringing on the 48V bus, and the integrated Miller clamp actively pulls the GaN gate low during turn-off. Its 0.6 mA quiescent current minimizes standby loss in cold-redundant server power shelves, and its single 5V supply requirement simplifies the auxiliary bias design compared to traditional 12V-supply drivers.
추천
Class-D Audio Amplifier Output Stage
The 1EDN7116GXTMA1 drives the 100V-rated GaN HEMT output stage of high-power Class-D audio amplifiers where switching frequencies above 500 kHz are required for audio-band performance. The 9 ns propagation delay enables 1 MHz PWM carriers while keeping distortion below 0.01% THD+N, and the 4A sink current suppresses body-diode conduction losses in the output filter. Compared to a conventional Si-MOSFET driver like the IRSM808-105MH, the 1EDN7116G's 200V blocking handles the 100V output swing of 250W+ amplifiers without a bootstrap circuit.
추천
On-Board Charger for Mild-Hybrid EV
The 1EDN7116GXTMA1 drives 200V-rated GaN HEMTs in the 3.3 kW to 22 kW on-board charger modules used in 48V mild-hybrid and 400V battery-electric vehicles. Its AEC-Q100-qualified automotive-grade variants (where available) and 200V switch-node tolerance handle the 12V-to-800V input range of modern traction inverters, while its 9 ns delay enables 200 kHz switching that shrinks the magnetic components by 4x. Compared to an IGBT driver like the IR2128SPBF, the 1EDN7116G reduces switching losses by 60% in GaN-based OBC designs.
추천
Solar Microinverter DC-DC Stage
The 1EDN7116GXTMA1 is used in the high-frequency DC-DC stage of solar microinverters where 60V to 150V-rated GaN HEMTs replace traditional Si MOSFETs to achieve 99% peak efficiency. Its 200V switch-node blocking handles the 150V DC-link of string inverters, its 4A sink overcomes Miller-induced turn-on at dV/dt up to 50 V/ns, and its differential TDI input rejects ground-bounce noise from the high-current PV panel return path. Compared to the IR2304SPBF, the 1EDN7116G enables 2x higher switching frequency in 600W microinverter designs.
추천
Industrial Motor Drive GaN Stage
The 1EDN7116GXTMA1 drives the GaN-based inverter stage of low-voltage industrial motor drives operating from 24V to 96V DC bus. Its 200V blocking covers the 100V-rated GaN switches used in robotics and AGV traction inverters, while its sub-10 ns propagation delay enables 200 kHz PWM for low-torque-ripple operation. The active Miller clamp prevents cross-conduction during the regenerative braking cycles that produce the highest dV/dt transients. Compared to a low-side Si driver like the IR2109SPBF, the 1EDN7116G cuts motor-drive switching losses by 70%.
추천
추천 제품 요약
엔지니어링 참조 데이터: 1EDN7116GXTMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | 1EDN7126GXTMA1 | 2EDN7534RXTMA1 | 1EDN7136UXTSA1 | 1EDN7550UXTSA1 | 2EDN7533RXTMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-VSON-10-4 (3x3 mm) | PG-VSON-10-4 (3x3 mm) - same | PG-VSON-10-4 (3x3 mm) - same | PG-VSON-10-4 (3x3 mm) - same | PG-VSON-10-4 (3x3 mm) - same | PG-VSON-10-4 (3x3 mm) - same |
| Peak Source Current | 2 A | 4 A | 4 A | 5 A | 5 A | 4 A |
| Peak Sink Current | 4 A | 6 A | 6 A | 8 A | 4 A | 6 A |
| Switch-Node Blocking Voltage | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
| Propagation Delay (Typ) | 9 ns | 9 ns | 12 ns | 8 ns | 9 ns | 10 ns |
| Channel Configuration | 1 channel, low-side | 1 channel, low-side | 2 channels, half-bridge | 1 channel, low-side | 1 channel, low-side | 2 channels, half-bridge |
| Miller Clamp | Integrated, active | Integrated, active | Integrated, active | Integrated, active | Integrated, active | Integrated, active |
| Operating Temp Range | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +125 °C |
주요 차별점
- Truly Differential Input (TDI) eliminates digital isolator in many low-side GaN designs (vs IR2117PBF)
- 4A peak sink current - double the source current - matches GaN Miller-clamp requirements (vs 2EDN7534RXTMA1)
- 200V switch-node blocking voltage - 2x safety margin over 100V GaN switches (vs 1EDN7550UXTSA1)
설계 노트
Keep the high-current gate-drive loop (driver OUT pin → FET gate → FET source → driver PGND) to a surface area of less than 1 cm² to minimize parasitic inductance. At dV/dt of 50 V/ns with 4A gate current, every additional 10 nH of loop inductance adds approximately 50 V of ringing to the gate waveform, which can exceed the GaN HEMT's maximum gate voltage and cause catastrophic failure. Use 2 oz copper on the top layer for the gate-drive return path directly beneath the driver and FET source pad.
Estimated: at 1 MHz switching frequency into a GaN HEMT with 5 nC total gate charge (Qg) and 5V gate drive, the 1EDN7116GXTMA1's internal gate-driver losses equal Qg × Vdrive × fsw = 5 nC × 5V × 1 MHz = 25 mW. Combined with the 0.6 mA quiescent current at 5V (3 mW) and 1 nC BST-pin switching loss at 1 MHz (5 mW), the total dissipation is roughly 33 mW. The PG-VSON-10-4 has θJA around 50 °C/W, so junction temperature rise above ambient is only 1.65 °C - well below the 150 °C limit.
Do not leave the IN- pin floating when using single-ended PWM input. The TDI structure requires both IN+ and IN- to be driven, even if IN- is tied to a logic-low static level via 1 kΩ to GND. Leaving IN- open causes the differential comparator to drift into a random state, leading to high-frequency self-oscillation that can overheat the gate driver. Similarly, place a 100 nF ceramic bypass capacitor within 5 mm of the VCC pin and a 1 µF capacitor within 10 mm to filter the high-frequency switching currents.
When driving GaN HEMTs with switching frequencies above 500 kHz, route the PWM input traces (IN+ and IN-) as a matched differential pair over a continuous ground reference. The 1EDN7116GXTMA1's TDI input has a 200 V/ns common-mode transient immunity (CMTI) per Infineon's datasheet, but only if the differential pair has less than 5 mm length mismatch. Above 1 MHz, add a 100 Ω differential termination resistor at the controller side to absorb reflections from the gate driver's input capacitance.
The integrated LDO regulator that supplies the gate-drive output (VDRV pin) requires a minimum 1 µF low-ESR ceramic capacitor to maintain regulation under transient load steps. During GaN hard-switching events, the gate-drive current can spike to 4A in less than 5 ns, causing momentary collapse of the gate-rail voltage if the bypass capacitor is undersized. For half-bridge designs where two 1EDN7116G drivers are stacked, place separate bypass capacitors on each driver's VDRV pin - do not share a single capacitor between the two channels.
규정 준수 정보
RoHS and REACH compliant per Infineon product page. The -GXTMA1 suffix indicates tape-and-reel packaging with lead-free (Pb-free) reflow profile. Halogen-free status not explicitly stated in the verified data. AEC-Q100 qualification not applicable to standard-grade -GXTMA1 parts; for automotive applications, refer to the 1EDN7116GXTMA1-Q1 variant.
