BAS4005E6327 - 40V 120mA Schottky Diode Array | Infineon
부품 번호: BAS4005E6327 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.36 | $3.60 |
| 100 | $0.24 | $24.00 |
| 500 | $0.18 | $90.00 |
| 1,000 | $0.14 | $140.00 |
| 3,000 | $0.11 | $330.00 |
BAS4005E6327 개요
A Schottky diode (also called a hot-carrier diode) is a semiconductor device formed by a metal-semiconductor junction rather than a P-N junction. Compared to standard silicon rectifiers, Schottky diodes offer a lower forward voltage (typically 0.3-0.4 V versus 0.6-0.7 V) and negligible reverse-recovery time, which translates into higher switching efficiency, lower power dissipation, and suitability for high-frequency applications where conventional diodes would introduce unacceptable switching losses. The product hypernym hierarchy is: Schottky diode -> rectifier diode -> diode -> discrete semiconductor -> electronic component.
The BAS4005E6327 delivers up to 120 mA of continuous DC forward current, a repetitive peak reverse voltage of 40 V, and a forward voltage designed to be minimal at low currents, making it especially useful in low-voltage, energy-constrained designs such as portable and battery-powered electronics. The compact SOT-23-3 footprint enables dense PCB layouts for multi-channel designs requiring multiple parallel clamping or OR-ing diodes.
Internally, each diode uses a metal-silicon Schottky barrier that minimizes stored charge and reverse-recovery time, so the part is well-suited to high-speed switching applications. The shared-cathode topology allows the array to be used as a dual half-wave rectifier or as two independent low-loss signal-path clamps with a common return.
Typical applications include reverse-polarity protection on USB and battery-powered ports, signal clamping in low-voltage data lines, free-wheeling diodes for small relays and inductors, voltage doubling in charge-pump circuits, low-current rectification in switching power supplies, and OR-ing diodes in dual-power redundant systems.
When designing with this part, ensure that the forward current rating (120 mA DC) is not exceeded under worst-case load and thermal conditions, and account for the SOT-23-3 power dissipation capability in your thermal budget. The common cathode pin must be tied to the lowest potential in the circuit to keep both diodes correctly biased.
This page synthesizes distributor stock and pricing from DigiKey, Mouser, and Octopart, drop-in compatible alternatives from the same Infineon family, and practical PCB design notes not found in the bare manufacturer datasheet.
드롭인 대체품: BAS4005E6327 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BAS40-05E6327HTSA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BAS40-05E6327XT
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BAS40-05E6327
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
PMEG2005EH
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
PMEG2005CT
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SDM40E20LS
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BAS4005E6327 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Product Type | Schottky diode array |
| Configuration | 1 Pair Common Cathode |
| Repetitive Peak Reverse Voltage (VRRM) | 40 V |
| Average Rectified Forward Current (IF(AV)) | 120 mA (DC) |
| 패키지 / 케이스 | TO-236-3, SC-59, SOT-23-3 |
| 실장 유형 | Surface Mount |
| 동작 온도 범위 | -55 C to +150 C (junction, per family datasheet) |
| 핀 수 | 3 |
| Diode Element Material | Silicon Schottky |
| Technology | Schottky / Hot-carrier |
| MSL 레벨 | 1 (per JEDEC J-STD-020, family) |
| RoHS 상태 | Compliant |
| Lead-Free / Finish | Yes (Matte Tin, per distributor listings) |
| AEC-Q100 Automotive Qualification | Not qualified (use BAS40-05E6327XT for automotive) |
BAS4005E6327 핀 구성
| 핀 1 | A1 — Anode of diode 1 |
| 핀 2 | A2 — Anode of diode 2 |
| 핀 3 | K — Common cathode |
일반적인 애플리케이션
BAS4005E6327 적합 용도: 7 애플리케이션s: Reverse-Polarity Protection (USB / Battery Port), Signal Clamping on Low-Voltage Data Lines, Free-Wheeling Diode for Small Relays and Inductors, Voltage Doubler / Charge-Pump Stage, Low-Current Rectification in Switching Power Supplies, OR-ing Diode in Dual-Power Redundant Systems, Mobile and Wearable Device Bias Supplies.
Reverse-Polarity Protection (USB / Battery Port)
The BAS4005E6327 fits reverse-polarity protection at low-current USB and battery ports because its common-cathode dual-Schottky topology places two parallel low-VF diodes between the input rail and ground, blocking reverse voltage while delivering up to 120 mA continuous forward current with negligible reverse-recovery time. Placed at the connector with the cathode to GND, it drops only 0.3-0.4 V versus 0.6-0.7 V for a silicon PN diode, preserving headroom for downstream regulators and reducing thermal dissipation at the protection element. With 40 V VRRM it tolerates transient spikes common on USB and 12 V rails, and its SOT-23-3 footprint fits even dense hub designs. For higher-current rails (>0.5 A), use the Nexperia PMEG2005EH instead.
추천
Signal Clamping on Low-Voltage Data Lines
In signal clamping roles on low-voltage data lines (I2C, GPIO, audio lines), the BAS4005E6327 acts as a low-capacitance, fast-responding clamp that diverts ESD or transient over-voltage events to ground before they damage downstream ICs. The common-cathode topology lets both diodes share a single ground return, keeping PCB routing tight and reducing parasitic inductance in the clamp path. Schottky technology ensures switching speeds far faster than PN diodes, capturing sub-microsecond transients. At 120 mA rating the part is dimensioned for typical ESD events (IEC 61000-4-2 contact discharges require diodes rated for several amps in surge), so use the BAS4005E6327 for energy-limited transients and pair with a dedicated TVS for full IEC compliance.
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Free-Wheeling Diode for Small Relays and Inductors
The BAS4005E6327 is well-suited as a free-wheeling (snubber) diode across small relays, solenoids, and inductors up to 120 mA, where it suppresses the back-EMF generated when the inductive load is switched off. Placing the dual-diode common-cathode across the coil clamps the inductive kick to within 1 V above the supply rail, protecting the driving transistor or MOSFET. The negligible reverse-recovery time of the Schottky barrier prevents the high-frequency ringing that PN diodes would otherwise introduce. With a 40 V reverse rating it comfortably tolerates 12 V and 24 V relay coils plus switching transients, and the SOT-23-3 footprint keeps the protection local to the relay for minimal loop inductance.
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Voltage Doubler / Charge-Pump Stage
In voltage-doubler and charge-pump topologies, the BAS4005E6327 provides two matched Schottky diodes in a single SOT-23-3, simplifying the BOM and PCB layout of low-current DC-DC doublers. Both diodes share the common-cathode pin, which connects to the charge-pump output, while the two anode pins serve the switched capacitor nodes. The low forward voltage (0.3-0.4 V) maximizes voltage-doubler efficiency at low output currents, and the absence of reverse-recovery loss keeps switching losses negligible even at moderate clock rates. At 120 mA it is dimensioned for bias supplies, RTC backup generation, or gate-drive bootstraps, not for powering heavy loads; for those use a switching regulator with an integrated charge pump.
추천
Low-Current Rectification in Switching Power Supplies
The BAS4005E6327 works as a low-current rectification element in switching power supply auxiliary windings, bias rails, and feedback paths where currents stay below 120 mA. Its Schottky barrier delivers a forward voltage drop roughly half that of a silicon PN diode, increasing rectification efficiency and reducing the heat that must be dissipated in the auxiliary winding path. The negligible reverse-recovery time means the diode does not inject switching noise back into the transformer winding, improving EMI margins. Designers should still add a small RC snubber across the diode for hard-switched topologies, and the 40 V reverse rating suits 5 V, 12 V, and 24 V auxiliary outputs.
추천
OR-ing Diode in Dual-Power Redundant Systems
The BAS4005E6327 is appropriate for OR-ing diodes in dual-power redundant systems where two sources (battery + adapter, two USB ports, two PoE rails) feed a common load and isolation is needed to prevent back-feeding. The common-cathode configuration is ideal because both source-return diodes share a single cathode node tied to the load, simplifying routing. Schottky low-VF minimizes the voltage drop the load sees, which is critical when stacking diodes in low-voltage rails where headroom is tight. At 120 mA continuous current the part suits low-power redundant paths such as RTC backup, MCU retention supplies, and sensor bridges. For higher current, use SS24 or SS34 with appropriate heatsinking.
추천
Mobile and Wearable Device Bias Supplies
Mobile and wearable devices benefit from the BAS4005E6327's tiny SOT-23-3 footprint and low forward-voltage drop when generating low-current bias rails for sensors, LEDs, and always-on blocks. With <1 uA quiescent loss, the dual-diode array supports efficient energy harvesting paths and prevents leakage from backup coin cells into the main rail. The 120 mA current rating is well-matched to bias and indicator-LED applications (20-50 mA typical), and the 40 V reverse voltage tolerates USB charger transients and hot-plug events common on wearable charging cradles. Pair the BAS4005E6327 with a low-Iq LDO such as the TPS7A02 to deliver a clean, ultra-low-power supply for always-on health-monitoring sensors.
추천
추천 제품 요약
엔지니어링 참조 데이터: BAS4005E6327 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BAS40-05E6327HTSA1 | BAS40-05E6327XT | BAS40-05E6327 | PMEG2005EH | PMEG2005CT | SDM40E20LS |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Nexperia | Nexperia | Diodes Incorporated |
| Package | SOT-23-3 | SOT-23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) |
| Configuration | Dual Common Cathode | Dual Common Cathode | Dual Common Cathode | Dual Common Cathode | Dual Common Cathode | Dual Common Cathode | Dual Common Cathode |
| VRRM (V) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V | 20 V |
| IF (avg) per diode | 120 mA | 120 mA | 120 mA | 120 mA | 500 mA | 500 mA | 400 mA |
| Reverse-Recovery Time | Negligible (Schottky) | Negligible | Negligible | Negligible | Negligible | Negligible | Negligible |
| Automotive Qualification | Not qualified | Automotive suffix | AEC-Q101 | Not qualified | AEC-Q101 | Not qualified | Not qualified |
| Approx. Unit Price (USD, qty 1) | 0.42 | 0.45 | 0.50 | 0.40 | 0.38 | 0.40 | 0.36 |
주요 차별점
- Highest-density dual Schottky footprint available from Infineon (vs SS24 (single 2 A Schottky in SMA))
- Lower forward voltage than PN-junction alternatives (vs BAV99 (dual switching diode in SOT-23-3))
- Automotive-grade option available in same package (vs PMEG2005EH (Nexperia cross))
- Wide Infineon distribution network and stable supply (vs SDM40E20LS (Diodes Incorporated cross))
설계 노트
Estimated: at IF=120 mA and VF=0.4 V, the BAS4005E6327 dissipates ~48 mW per diode in free-wheeling operation. With a SOT-23-3 theta_JA of approximately 250 C/W (per JEDEC EIA/JESD51 standards for small-outline packages), the junction temperature rise is ~12 C above ambient per diode, well within the 150 C maximum. Designers do not need a heatsink for the BAS4005E6327 under continuous 120 mA load, but should keep the SOT-23-3 copper pad sized per the SOT-23 standard land pattern (IPC-7351 nominal) for adequate thermal spreading. Both diodes can be operated at full rating simultaneously only if package dissipation stays within limits - in practice, limit total array dissipation to 150 mW to stay safely derated.
Follow the IPC-7351 SOT-23 nominal land pattern for the BAS4005E6327: a 0.45 mm wide central pad and 0.9 mm pitch between pads, with solder mask defined (SMD) rather than non-solder mask defined (NSMD) for best solder joint reliability. Pin 1 is identified by the dot on the package body or by the orientation marker; the common-cathode pin (pin 3) should be routed to the lowest potential with a wide, short trace to minimize ground-bounce. Place the device close to the connector or inductive load it protects, so the protection loop is short and effective. For ESD-sensitive signal lines, add a small ferrite bead in series upstream of the diode for additional high-frequency filtering.
Do not exceed 120 mA continuous DC forward current - sustained operation above this rating risks thermal failure of the SOT-23-3 package. Do not reverse the diode orientation: the common cathode pin (pin 3) MUST connect to the lowest potential in the circuit for both diodes to be correctly forward-biased; reversing the device destroys it within microseconds of power application. Do not use the BAS4005E6327 in place of a dedicated TVS for IEC 61000-4-2 ESD compliance - the 120 mA rating is far below the surge levels required by the standard. Finally, do not parallel the two internal diodes without external ballast resistors if expecting >150 mA combined current, since thermal runaway can concentrate current in one diode.
Route the common-cathode pin (pin 3) of the BAS4005E6327 directly to the system ground plane with a via placed as close to the pad as possible to minimize the diode-to-ground inductance. For free-wheeling applications across a relay or inductor coil, keep the loop area between the diode and the coil as small as possible (target <50 mm^2) to limit the inductive overshoot and high-frequency ringing. If the diode is used as a rectifier in a switching supply, place a small RC snubber (typically 10 ohm + 100 pF) across the diode to damp the switching node transients. Avoid running signal traces under the SOT-23-3 to prevent coupling noise into sensitive analog or RF sections.
규정 준수 정보
RoHS and lead-free per Infineon product page and DigiKey listing (Matte Tin finish). Use BAS40-05E6327XT for AEC-Q101 automotive grade. Halogen-free per Infineon green-product statement.
