IPP60R099C7 - 600V 99mOhm 22A CoolMOS C7 MOSFET | Infineon
부품 번호: IPP60R099C7 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.88 | $28.80 |
| 100 | $2.45 | $245.00 |
| 500 | $2.1 | $1,050.00 |
| 1,000 | $1.85 | $1,850.00 |
IPP60R099C7 개요
A power MOSFET is a field-effect transistor designed to switch significant power levels by controlling drain-source current through a gate-generated electric field. Power MOSFETs sit within the discrete semiconductor family alongside diodes, thyristors, and IGBTs, and serve as the primary switching elements in power electronics such as SMPS, inverters, and DC-DC converters. The CoolMOS C7 series uses superjunction technology - alternating p- and n-type pillars in the drift region - to achieve high breakdown voltage with very low on-resistance and reduced parasitic capacitances versus conventional planar MOSFETs.
Key features include a best-in-class figure of merit (low RDS(on) x Qg) that reduces conduction and switching losses, approximately 50% lower turn-off losses (Eoss) compared to the CoolMOS CP series, and an avalanche energy rating (EAS) of 97 mJ for robustness in unclamped inductive switching. The gate threshold voltage is typically 3.5 V with a maximum gate-source rating of +/-20 V, and the junction temperature range is -55C to +150C.
Technically, the superjunction architecture shrinks die area and capacitances, enabling high-frequency operation in CCM PFC and LLC resonant topologies. The fast body diode benefits bridge and LLC designs where reverse recovery performance matters.
Typical applications include PFC stages in server and telecom power supplies, LLC resonant converters, solar inverters, and EV charging infrastructure.
Design tip: use a 5-10 Ohm gate resistor and provide adequate heatsinking; as of 2026-08-29, verify Eoss and Qg values in the official datasheet for your exact switching frequency.
드롭인 대체품: IPP60R099C7 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPP60R099C6
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IPP60R125C7
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IPP60R190C7
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
STW20NM60ND
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IPP60R099C7 최대 정격 & 전기적 특성
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID @ 25C) | 22 A |
| On-State Resistance (RDS(on) max @ VGS=10V) | 99 mOhm |
| Technology | CoolMOS C7 superjunction |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V |
| Maximum Gate-Source Voltage | +/-20 V |
| Avalanche Energy (EAS) | 97 mJ |
| Input Capacitance (Ciss) | 1.819 nF |
| 동작 접합 온도 | -55C to +150C |
| 패키지 | TO-220 (PG-TO220-3) |
| 실장 유형 | Through Hole |
| Configuration | Single MOSFET |
| Turn-off Losses | ~50% lower than CoolMOS CP series (Eoss) |
| RoHS 상태 | Compliant |
| Typical Applications | PFC, LLC, SMPS |
IPP60R099C7 핀 구성
| 핀 1 | Gate — Gate control terminal; drive via 5-10 Ohm resistor |
| 핀 2 | Drain — Drain terminal, electrically connected to mounting tab |
| 핀 3 | Source — Source terminal, kelvin reference for gate drive return |
안전 동작 영역
일반적인 애플리케이션
IPP60R099C7 적합 용도: 6 애플리케이션s: PFC Stage in Server/Telecom Power Supplies, LLC Resonant Converter, Solar String Inverters, EV Charging Stations, Industrial SMPS / AC-DC Power Supplies, Motor Drives and Inverters.
PFC Stage in Server/Telecom Power Supplies
The IPP60R099C7 fits CCM boost PFC stages because its 99 mOhm RDS(on) minimizes conduction loss at sustained high inductor currents, while the C7 generation's ~50% lower Eoss versus CoolMOS CP cuts turn-off switching loss in hard-switched boost operation. Placed as the boost switch in a 400 V output PFC front end driven at 65-140 kHz, it improves overall power-supply efficiency by one to two percentage points. Pair with a low-side gate driver and 5-10 Ohm gate resistor.
추천
LLC Resonant Converter
In LLC half-bridge and full-bridge topologies for server and telecom power, the IPP60R099C7 provides low conduction loss at the primary side while its superjunction capacitance profile supports soft-switching (ZVS) at 100 kHz+ resonant frequencies. The fast body diode reduces reverse-recovery related stress during dead-time transitions. Its TO-220 package simplifies prototyping and heatsinking. Pair with an isolated half-bridge driver with adjustable dead-time to guarantee ZVS across load range.
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Solar String Inverters
Grid-tied solar inverters use 600 V superjunction MOSFETs in the DC-AC H-bridge and boost stages. The IPP60R099C7's low 99 mOhm RDS(on) reduces conduction losses during high-irradiance operation, and its 97 mJ avalanche rating adds robustness against voltage transients from the DC link and line side. Its 600 V rating suits 400 V-class DC bus architectures common in residential and commercial string inverters. Adequate heatsinking and gate damping resistors are essential to control ringing.
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EV Charging Stations
AC-DC rectifier and PFC front ends in EVSE and fast-charger power modules use 600 V superjunction MOSFETs at multi-kilowatt levels. The IPP60R099C7 handles 22 A continuous, and multiple devices can be paralleled thanks to the superjunction technology's stable RDS(on) versus temperature behavior. The ~50% Eoss reduction versus CoolMOS CP directly improves charging-module efficiency, reducing cooling requirements. Combine with a CCM PFC controller and robust isolated drivers.
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Industrial SMPS / AC-DC Power Supplies
General-purpose industrial switched-mode power supplies (flyback, forward, half-bridge) in the 300 W-3 kW range benefit from the IPP60R099C7's balance of 600 V blocking, 99 mOhm conduction, and low switching losses. The through-hole TO-220 package simplifies assembly and field service in industrial builds, and the -55C to +150C junction range supports harsh factory environments. Use a 5-10 Ohm gate resistor to tame superjunction switching ringing and prevent spurious turn-on.
추천
Motor Drives and Inverters
Small industrial motor drives and DC servo inverters use 600 V MOSFETs in three-phase bridge configurations. The IPP60R099C7's low RDS(on) lowers conduction heating at high torque/current, while the fast intrinsic body diode manages freewheeling currents between PWM commutations. Its avalanche robustness (97 mJ EAS) provides margin against inductive kick from motor windings and wiring. Isolated gate drivers with Miller clamp and desaturation protection are recommended for reliability.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPP60R099C7 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPP60R099C6 | IPP60R125C7 | STW20NM60ND | STF25NM60ND |
|---|---|---|---|---|---|
| Package | TO-220 (PG-TO220-3) | TO-220 - same | TO-220 - same | TO-220 - same | TO-220FP (different mounting) |
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | STMicroelectronics |
| Drain-Source Voltage | 600 V | 600 V | 600 V | 600 V | 600 V |
| Generation / Technology | CoolMOS C7 superjunction | CoolMOS C6 | CoolMOS C7 | MDmesh M2 | MDmesh M2 |
| Package Match | TO-220 through-hole | Pin-to-pin drop-in | Pin-to-pin drop-in | Pin-to-pin drop-in | TO-220FP - requires mounting review |
주요 차별점
- Latest-generation switching losses (vs IPP60R099C6)
- Lower conduction loss than 125 mOhm variant (vs IPP60R125C7)
- Standard TO-220 footprint vs isolated TO-220FP (vs STF25NM60ND)
설계 노트
Gate drive layout: place the gate driver as close as possible to the gate pin and use a 5-10 Ohm series gate resistor (split into an external Rg plus a few Ohms internal dampening) to control superjunction switching ringing and prevent parasitic dv/dt turn-on. Keep the gate loop area minimal and route the source return separately from the power loop.
In a TO-220 without heatsink, free-air dissipation is limited to roughly 2-3 W. For PFC/LLC duty at 15 A+ or above 100 kHz, mount to a heatsink with thermal interface material; keep junction temperature below 150C with margin (target under 110C). Estimate losses as I_rms^2 x RDS(on) at operating temperature plus Eoss x fsw plus output-charge related loss.
Superjunction MOSFETs exhibit steep capacitance nonlinearity versus VDS; do not extrapolate Eoss/Qoss values from low-voltage measurements. Also, the low internal gate resistance means dv/dt immunity depends heavily on external gate impedance - avoid undersized gate pull-down during off-state. Confirm gate-charge and Eoss figures in the official Infineon datasheet rather than relying on family-level estimates.
규정 준수 정보
RoHS compliant per Infineon product page; industrial grade, not AEC-Q100 qualified. Automotive use requires express written approval per datasheet.
