DS1220Y - 16Kb NV SRAM, 2Kx8, 24-EDIP | Maxim Integrated
부품 번호: DS1220Y ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $18.5 | $18.50 |
| 10 | $16.2 | $162.00 |
| 100 | $13.95 | $1,395.00 |
| 500 | $11.4 | $5,700.00 |
| 1,000 | $9.85 | $9,850.00 |
DS1220Y 개요
A nonvolatile SRAM (NVSRAM) is a hybrid memory technology that combines the byte-level random-access performance and unlimited write endurance of standard SRAM with the data retention of nonvolatile storage. In the DS1220Y, the lithium cell, the SRAM array, and the supply-sense controller are co-packaged inside the EDIP module, which is pin-compatible with the JEDEC-standard 24-pin bytewide SRAM/EEPROM/EPROM (2716/2816) footprint. Within the broader memory hierarchy, the DS1220Y sits between volatile SRAM (no data retention) and true nonvolatile memories such as EEPROM, Flash, and FRAM.
Key features include 10 years minimum data retention in the absence of external power, unlimited write cycles, low-power CMOS operation, direct replacement for 2K x 8 volatile static RAM or EEPROM, and automatic write protection during power loss. The Y-speed grade variants (DS1220Y-100, -120, -150, -200) provide access times of 100, 120, 150, and 200 ns respectively, allowing designers to trade speed against cost. Operating from a single 5 V ±10% supply, the device draws only a few milliamps during active read/write and switches to microamp-level backup current when VCC falls below threshold.
The DS1220Y is a drop-in replacement for the popular 2K x 8 SRAM and is pin-compatible with the 2716 EPROM and 2816 EEPROM, making it ideal for legacy systems where the original battery-backed SRAM has failed or where unlimited write endurance is required. Typical applications include industrial controllers, point-of-sale terminals, data loggers, PLCs, and instrumentation where settings, calibration constants, or transaction logs must survive power cycles without write-cycle wear.
When designing with the DS1220Y, observe that the lithium cell cannot be replaced in the field; therefore, plan for end-of-life replacement after approximately 10 years of powered operation. Decouple VCC with a 0.1 µF ceramic capacitor close to the supply pin, and avoid prolonged exposure to high temperatures to maximize cell life.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes not found on a single distributor page, helping engineers evaluate the DS1220Y for new designs and legacy repairs.
드롭인 대체품: DS1220Y — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
DS1220Y-100
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
DS1220Y-120
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
DS1220Y-150
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
DS1220Y-200IND+
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
DS1220Y-150+
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
DS1220Y 최대 정격 & 전기적 특성
| 메모리 유형 | Non-Volatile SRAM (NVSRAM) |
| Memory Organization | 2K x 8 (2048 words by 8 bits) |
| 메모리 크기 | 16 Kbit (16,384 bits) |
| 인터페이스 | Parallel |
| Supply Voltage (VCC) | 5 V ±10% |
| Access Time | 200 ns (DS1220Y base grade; -100, -120, -150 grades also available) |
| Data Retention | 10 years minimum (no external power) |
| Write Endurance | Unlimited |
| Backup Battery | Internal lithium energy source (non-replaceable) |
| 동작 온도 | 0°C to +70°C (commercial); -40°C to +85°C (IND+ grade) |
| 패키지 | 24-pin EDIP (Extended DIP, through-hole) |
| 실장 유형 | Through-Hole |
| Pin Compatibility | JEDEC 24-pin bytewide SRAM / 2716 EPROM / 2816 EEPROM |
| RoHS 상태 | Compliant (post-2006 lead-free revisions) |
| MSL 레벨 | Not applicable (through-hole package) |
DS1220Y 핀 구성
| 핀 1 | A7 — Address input A7 |
| 핀 2 | A6 — Address input A6 |
| 핀 3 | A5 — Address input A5 |
| 핀 4 | A4 — Address input A4 |
| 핀 5 | A3 — Address input A3 |
| 핀 6 | A2 — Address input A2 |
| 핀 7 | A1 — Address input A1 |
| 핀 8 | A0 — Address input A0 |
| 핀 9 | DQ0 — Data input/output DQ0 |
| 핀 10 | DQ1 — Data input/output DQ1 |
| 핀 11 | DQ2 — Data input/output DQ2 |
| 핀 12 | GND — Ground |
| 핀 13 | DQ3 — Data input/output DQ3 |
| 핀 14 | DQ4 — Data input/output DQ4 |
| 핀 15 | DQ5 — Data input/output DQ5 |
| 핀 16 | DQ6 — Data input/output DQ6 |
| 핀 17 | DQ7 — Data input/output DQ7 |
| 핀 18 | /CE1 — Chip enable 1 (active low) |
| 핀 19 | A10 — Address input A10 |
| 핀 20 | /OE — Output enable (active low) |
| 핀 21 | A9 — Address input A9 |
| 핀 22 | A8 — Address input A8 |
| 핀 23 | /WE — Write enable (active low) |
| 핀 24 | VCC — +5 V supply |
일반적인 애플리케이션
DS1220Y 적합 용도: 6 애플리케이션s: Industrial PLC Nonvolatile Memory, Point-of-Sale Terminal Memory, Data Logger / Instrumentation Buffer, Legacy 2716 EPROM / 2816 EEPROM Replacement, Vintage Computer CMOS Battery Replacement, Security Alarm Panel Event Log.
Industrial PLC Nonvolatile Memory
The DS1220Y's 16 Kbit (2K x 8) organization, JEDEC 24-pin DIP pinout, and 10-year internal lithium backup make it ideal for storing PLC ladder-logic parameters, calibration constants, and recipe data. At 200 ns access (Y-200 base grade) it satisfies the bus timing of legacy 8-bit industrial controllers. The unlimited write endurance allows operator-driven parameter changes without EEPROM wear-out, and the wide commercial/industrial temperature range supports factory-floor environments. Decouple VCC with 0.1 uF close to pin 24, and avoid operating above 70C ambient to maximize lithium-cell life over the 10-year data-retention window.
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Point-of-Sale Terminal Memory
POS terminals require nonvolatile storage of transaction logs, terminal configuration, and tax tables that must survive power cycles and unattended operation. The DS1220Y's unlimited write endurance handles high-frequency transaction logging without the wear concerns of EEPROM, while the 10-year internal lithium cell eliminates field-serviceable battery maintenance. The 24-EDIP package is straightforward to place on through-hole POS motherboards, and the parallel interface simplifies integration with legacy Z80 / 8051 / x86 POS controllers. Designers should budget approximately 1 mA active and microamp-level backup currents for power-budget planning.
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Data Logger / Instrumentation Buffer
Battery-powered data loggers and field instrumentation need a nonvolatile memory that survives brown-outs and indefinite power-down periods. The DS1220Y's automatic lithium-backup switchover on VCC out-of-tolerance prevents data corruption when the primary supply drops, making it well suited for environmental loggers, gas meters, and portable test instruments. The Y-speed grades (100-200 ns) match slow microcontroller buses, and the 2K x 8 word fits compact sample-record formats. Designers should verify write-cycle timing against the host MCU's bus cycle; estimate the in-circuit write-cycle current at approximately 5-10 mA peak per the datasheet characteristic curves.
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Legacy 2716 EPROM / 2816 EEPROM Replacement
Many legacy designs use the JEDEC 24-pin bytewide standard for the 2716 (2K x 8 EPROM) and 2816 (2K x 8 EEPROM). The DS1220Y is a pin-compatible, bytewise-rewriteable upgrade that eliminates UV-erase requirements (replacing 2716 EPROM) and avoids the 10 ms byte-write delay (replacing 2816 EEPROM). For retrocomputing and vintage-computer restoration projects, the DS1220Y preserves original firmware while enabling fast in-system re-flashing. Verify pinout against the original 2716/2816 socket; pin 1 location and GND/VCC assignment follow JEDEC bytewide standard.
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Vintage Computer CMOS Battery Replacement
Vintage 1980s and 1990s computers and industrial controllers originally used external coin-cell batteries (often Dallas-style DS1218 + BR2325) to back up configuration RAM. When those batteries leak and damage the PCB, the DS1220Y serves as a direct 24-pin replacement module containing both the SRAM and a sealed lithium source. Hobbyists use socket adapters or hand-wired harnesses to swap DS1220Y modules for failed battery-backed SRAM sockets. The internal lithium cell lasts 10+ years, often outlasting the rest of the original equipment. Plan a 10-year service window before lithium depletion requires module replacement.
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Security Alarm Panel Event Log
Security alarm panels store event logs, user codes, and configuration data in nonvolatile memory. The DS1220Y provides 2K x 8 bytes of unlimited-write NVSRAM, well suited to logging arm/disarm events, sensor triggers, and operator changes across the 10-year retention window. The 24-pin EDIP through-hole package is robust against vibration and connector stress typical of wall-mounted alarm enclosures. Designers should provision write-protect logic (via the /WE pin) during firmware updates to prevent unintended overwrites, and observe the datasheet's lithium-cell operating-temperature derating curves for attic or outdoor-mounted panels.
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추천 제품 요약
엔지니어링 참조 데이터: DS1220Y — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | DS1220Y-100 | DS1220Y-120 | DS1220Y-150 | DS1220Y-200IND+ |
|---|---|---|---|---|---|
| Brand | Maxim Integrated | Maxim Integrated | Maxim Integrated | Maxim Integrated | Maxim Integrated |
| Package | 24-pin EDIP | 24-pin EDIP - same | 24-pin EDIP - same | 24-pin EDIP - same | 24-pin EDIP - same |
| Memory Size | 16 Kbit (2K x 8) | 16 Kbit (2K x 8) - same | 16 Kbit (2K x 8) - same | 16 Kbit (2K x 8) - same | 16 Kbit (2K x 8) - same |
| Access Time | 200 ns | 100 ns (-50%) | 120 ns (-40%) | 150 ns (-25%) | 200 ns - same |
| Data Retention | 10 years minimum | 10 years minimum - same | 10 years minimum - same | 10 years minimum - same | 10 years minimum - same |
| Write Endurance | Unlimited | Unlimited - same | Unlimited - same | Unlimited - same | Unlimited - same |
| Operating Temperature | 0°C to +70°C (commercial) | 0°C to +70°C | 0°C to +70°C | 0°C to +70°C | -40°C to +85°C (industrial) |
| Backup Battery | Internal lithium cell | Internal lithium cell - same | Internal lithium cell - same | Internal lithium cell - same | Internal lithium cell - same |
주요 차별점
- Pin-compatible with 2716 EPROM and 2816 EEPROM JEDEC socket standard (vs DS1220AB)
- Unlimited write endurance vs EEPROM byte-write wear (vs AT28C16 (EEPROM))
- Drop-in speed-grade family across 100-200 ns access times (vs DS1220Y-200 base grade)
설계 노트
Estimated: the DS1220Y draws approximately 5-10 mA peak during active read/write at 5 V and drops to microamp-level backup current when VCC falls below the 4.5 V out-of-tolerance threshold. Decouple VCC (pin 24) with a 0.1 uF ceramic capacitor placed within 5 mm of the package. The internal lithium cell cannot be recharged or replaced - design the system for end-of-life module replacement after approximately 10 years of powered retention.
Do not confuse the DS1220Y (internal lithium backup, 24-EDIP) with the DS1220AB (external battery required via DS1218 controller) - the pinouts differ at the battery-sense pins, so they are NOT drop-in compatible. Also avoid using a standard 6116 SRAM as a substitute if data retention is required; 6116 has no internal backup. When upgrading older designs, verify pin 1 orientation against the JEDEC 24-pin bytewide DIP standard (pin 1 at top-left with notch up).
Lithium-cell data-retention lifetime is inversely related to operating temperature. Per the manufacturer datasheet, sustained operation above 70C ambient accelerates lithium depletion. For industrial-temperature applications, specify the IND+ grade (-40C to +85C) and design enclosures with adequate ventilation. Estimate: a continuous 60C ambient yields near the full 10-year retention, while 85C may reduce it to 5-7 years. Avoid placing the DS1220Y adjacent to heat-dissipating components such as linear regulators or power transistors.
규정 준수 정보
DS1220Y RoHS-compliant lead-free variants carry the + suffix on the part number (e.g., DS1220Y-150+, DS1220Y-200IND+). Industrial temperature grades carry the IND+ suffix. Halogen-free status not explicitly stated in the datasheet excerpt.
