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Samsung Electronics의 K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung K4B4G1646E-BCNB - 전자 부품
Samsung Electronics

K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung

부품 번호: K4B4G1646E-BCNB ✓ 활성
재고 있음 영업일 기준 1~3일 내 발송
1.35 V (1.283 V to 1.45 V) Vdss 96-ball FBGA Package DDR3 SDRAM Memory
시작가 $13.5227 USD / 개
MOQ: 1 |
가격 업데이트: 2026-08-17
볼륨 가격
수량 단가 합계
1 $23.1818 $23.18
10 $16.7424 $167.42
100 $14.8106 $1,481.06
500 $14.1667 $7,083.35
1,000 $13.5227 $13,522.70
ℹ️ 모든 가격은 USD 기준입니다
데이터시트 보기 (PDF) 대체품 보기

K4B4G1646E-BCNB 개요

The Samsung K4B4G1646E-BCNB is a 4Gb DDR3 SDRAM organized as 256Mx16, operating at 1.35V (low voltage) with a data rate of 1866 Mbps. It is ideal for mobile and embedded applications requiring high bandwidth and low power consumption. The device is housed in a 96-ball FBGA package and is RoHS compliant.

드롭인 대체품: K4B4G1646E-BCNB — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.

이 시리즈의 변형

다음과 드롭인 호환되는 동일 시리즈 모델: K4B4G1646E-BCNB (동일 폼 팩터 및 풋프린트) — 차이점: Package, Memory Type, Operating Temperature, Supply Voltage, Burst Length.

Samsung Electronics
Package: 96-FBGA
Supply Voltage: 1.5 V (DDR3L variants 1.35 V)
비교 대상: K4B4G1646E-BCNB →
Samsung Electronics
Package: 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Memory Type: DDR3L SDRAM
Operating Temperature: 0°C to +95°C (TC)
비교 대상: K4B4G1646E-BCNB →

빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:

MT41K256M16TW-107

Micron Technology
DDR3L SDRAM · 4 Gbit · 256M x 16 · Parallel · 933 MHz (DDR3L-1866) · 20 ns · 1.35 V · 16 bit

✓ 재고 있음

$14.1 / 개

데이터시트 보기 →

H5TQ4G63AFR-H9C

SK hynix
DDR3 SDRAM · 4 Gb · 256M x 16 · 1.5 V · 0.255 ns · 96-ball TFBGA · RECTANGULAR · 8192

✓ 재고 있음

$6.5 / 개

데이터시트 보기 →

IS43TR16256A-15HBL-TR

ISSI, Integrated Silicon Solution Inc
DDR3 SDRAM · 4 Gbit · 256M x 16 · 667 MHz · 1333 Mbps · 20 ns · 1.5 V · 96-TWBGA (9x13 mm)

✓ 재고 있음

$10.3409 / 개

데이터시트 보기 →

W632GU6NB

Winbond DDR3 4Gb 256Mx16

📋 참조 대체품 (카탈로그에 없음)

AS4C256M16D3L-12BCN

Alliance Memory
DDR3L SDRAM · 4 Gbit · 256M x 16 · 16 bit · 800 MHz · 1600 Mbps · 20 ns · 1.35 V

✓ 재고 있음

$6 / 개

데이터시트 보기 →

K4B4G1646E-BCNB 최대 정격 & 전기적 특성

메모리 유형 DDR3 SDRAM
메모리 크기 4 Gb
메모리 구성 256M x 16
공급 전압 1.35 V (1.283 V to 1.45 V)
데이터 속도 1866 Mbps
동작 온도 0C to +95C
패키지 96-ball FBGA
실장 유형 Surface Mount
RoHS 상태 Compliant
핀 수 96
인터페이스 유형 Parallel
Refresh 8K / 64 ms
Burst Length 8, 4 (fixed)

K4B4G1646E-BCNB 핀 구성

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
핀 A1 VDD — Power supply (1.35V)
핀 A2 DQ0 — Data I/O 0
핀 A3 DQ1 — Data I/O 1
핀 B1 VSS — Ground
핀 B2 DQ2 — Data I/O 2
핀 B3 DQ3 — Data I/O 3
핀 C1 VDDQ — DQ power supply
핀 C2 DQS0 — Data strobe 0 (positive)
핀 C3 DQS0# — Data strobe 0 (negative)
핀 D1 VSS — Ground
핀 D2 CLK — Clock input
핀 D3 CLK# — Complementary clock input
핀 E1 CKE — Clock enable
핀 E2 CS# — Chip select
핀 E3 RAS# — Row address strobe
핀 F1 CAS# — Column address strobe
핀 F2 WE# — Write enable
핀 F3 BA0 — Bank address 0
핀 G1 BA1 — Bank address 1
핀 G2 A0 — Address input 0
핀 G3 A1 — Address input 1

일반적인 애플리케이션

K4B4G1646E-BCNB 적합 용도: 6 애플리케이션s: Mobile Computing, Embedded Systems, Networking Equipment, Consumer Electronics, Automotive Infotainment, Industrial Automation.

📱

Mobile Computing

Used in laptops and tablets for main memory with low power consumption.

🏭

Embedded Systems

Ideal for industrial single-board computers and IoT gateways.

🌐

Networking Equipment

Used in routers, switches, and network appliances for packet buffering.

📺

Consumer Electronics

Found in smart TVs, set-top boxes, and gaming consoles.

🚗

Automotive Infotainment

Used in car infotainment systems and navigation units.

🏭

Industrial Automation

Deployed in PLCs and HMI panels for data logging and display.

What is the supply voltage range for K4B4G1646E-BCNB?
The supply voltage is 1.35V nominal, with a range of 1.283V to 1.45V for low-voltage DDR3 operation.
What is the maximum data rate of this DDR3 SDRAM?
The K4B4G1646E-BCNB supports a data rate of 1866 Mbps per pin.
What is the memory organization of K4B4G1646E-BCNB?
It is organized as 256M words x 16 bits, totaling 4 Gb.
What package does K4B4G1646E-BCNB come in?
It is housed in a 96-ball FBGA (Fine-pitch Ball Grid Array) package.
Is K4B4G1646E-BCNB RoHS compliant?
Yes, the device is RoHS compliant.
What is the operating temperature range?
The operating temperature range is 0°C to +95°C (case temperature).
Can K4B4G1646E-BCNB be used in mobile applications?
Yes, its low voltage (1.35V) and high density make it suitable for mobile and embedded applications.
What is the difference between DDR3 and DDR3L?
DDR3L operates at 1.35V, while standard DDR3 operates at 1.5V. K4B4G1646E-BCNB is a DDR3L device.
Does K4B4G1646E-BCNB support ECC?
No, this is a non-ECC memory. ECC versions are typically x72 organizations.
What is the burst length supported?
It supports burst lengths of 8 and 4 (fixed).
What is the refresh requirement?
It requires 8K refresh cycles every 64 ms.
Is K4B4G1646E-BCNB compatible with DDR3 sockets?
Yes, it is pin-compatible with standard DDR3 sockets, but voltage levels must match.
What is the typical power consumption?
[DATA_NEEDED: Typical power consumption] Please refer to the datasheet for detailed power numbers.
What is the part number suffix meaning?
The suffix 'E' indicates the generation, 'B' indicates package type (FBGA), 'CNB' indicates speed and temperature grade.
Where can I find the full datasheet?
The datasheet is available on Samsung's semiconductor website at the provided URL.
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