FF800R12KF4 - 1200V 800A Dual IGBT Module | Infineon
부품 번호: FF800R12KF4 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
FF800R12KF4 개요
An IGBT (Insulated Gate Bipolar Transistor) module combines the high input impedance of a MOSFET with the low on-state voltage drop of a bipolar transistor. Within the power electronics hierarchy, IGBT modules are the core switching elements of inverters, converters, and motor drives, converting DC to AC and regulating power flow from kilowatt to megawatt scale.
Key features include a 1200V VCES rating, 800A DC collector current, 5000W maximum power dissipation, and a 150C maximum junction temperature. The module integrates two IGBTs with anti-parallel fast-recovery diodes, enabling half-bridge topologies with low reverse-recovery losses. Its isolated baseplate provides safe mounting and effective heat extraction.
Technically, the FF800R12KF4 utilizes Infineon trench-gate IGBT technology, which reduces VCE(sat) and switching losses for higher system efficiency. The low-inductance package design limits voltage overshoot during fast switching, and the module supports parallel operation for scalable higher-current designs.
Typical applications include industrial motor drives, wind turbine converters, UPS systems, and welding equipment. The 1200V/800A class ratings make it well suited for high-power inverters and medium-voltage drive front ends.
When designing with this module, provide proper gate drive circuitry (typically +15V/-15V), snubber networks to control switching transients, and adequate heatsinking to keep junction temperature within the 150C limit.
드롭인 대체품: FF800R12KF4 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
FF800R12KF6C_B2
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FF800R16KF6-B2
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FF800R16KF6
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FF800R17KE3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FF1400R17T2P8
⚡ 동일 패키지✓ 재고 있음
$680 / 개
데이터시트 보기 →FF800R12KF4 최대 정격 & 전기적 특성
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) | 800 A |
| Configuration | Dual switch (half-bridge) with built-in diodes |
| Maximum Power Dissipation | 5000 W |
| Maximum Junction Temperature | 150 C |
| Technology | Trench-gate IGBT |
| Diode Type | Fast-recovery anti-parallel freewheeling diodes |
| 실장 유형 | Chassis mount (non surface-mount), terminals upper position |
| 패키지 | High-power IGBT module, isolated baseplate |
| Parallel Operation | Supported |
| Gate Drive Voltage | +15 V / -15 V recommended |
FF800R12KF4 high-power igbt module, isolated baseplate 핀 구성 가이드
FF800R12KF4(high-power igbt module, isolated baseplate 패키지)의 핀 구성입니다. 이 전력 소자는 게이트, 드레인, 소스 단자를 갖추고 있습니다. 비편향 패키지의 경우 정확한 핀 1 방향과 풋프린트 세부 정보는 제조사 데이터시트를 참조하십시오. 일반적인 응용 분야로는 전원 공급 장치 설계, 모터 구동, 부하 스위칭이 있습니다.
다음에 대한 상세 핀아웃 데이터 없음: FF800R12KF4.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
안전 동작 영역
일반적인 애플리케이션
FF800R12KF4 적합 용도: 6 애플리케이션s: Industrial Motor Drives, Wind Turbine Converters, UPS Systems, Welding Equipment, Traction and High-Power Inverters, Solar Central Inverters.
Industrial Motor Drives
The FF800R12KF4's 1200V/800A half-bridge configuration is a direct fit for high-power industrial variable frequency drives. The integrated fast-recovery freewheeling diodes handle inductive motor current during PWM switching, while trench-gate technology lowers VCE(sat) to reduce conduction losses in continuous-duty operation. Placed in the inverter stage between the DC bus and motor phases, the module's low-inductance package limits turn-off voltage overshoot on long bus bars, and its isolated baseplate simplifies mounting to forced-air heatsinks in drive cabinets.
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Wind Turbine Converters
In wind turbine grid-side and machine-side converters, the FF800R12KF4 provides rugged 1200V switching with 800A capability for megawatt-class power stages. Its 5000W dissipation rating and low thermal resistance support the high cyclic loads typical of renewable energy conversion, while parallel-capable design allows scalable converter architectures. The module's robust isolated construction withstands the harsh vibration and temperature environments of nacelle installations; thermal cycling capability and a 150C junction limit are key reliability considerations for 20-year turbine lifetimes.
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UPS Systems
Large three-phase uninterruptible power supplies use the FF800R12KF4 in both the rectifier/PFC front end and the inverter output stage. The 1200V rating covers 400V-class DC bus systems with margin, and the dual-switch package halves component count per phase leg. Low switching losses from trench-gate IGBTs improve overall UPS efficiency, directly reducing operating energy costs in datacenter applications. The built-in anti-parallel diodes manage reactive load currents during battery-to-mains transfers, and the chassis-mount isolated baseplate eases integration into standard UPS power shelves.
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Welding Equipment
Heavy-duty industrial welding power sources benefit from the FF800R12KF4's 800A current handling and fast-recovery diodes in high-frequency inverter topologies. Welding loads impose extreme repetitive current pulses; the module's 5000W power dissipation rating and high thermal cycling robustness address this duty. Trench-gate technology provides low saturation voltage to limit heat in high-duty-cycle welding arcs, and the low-inductance package reduces switching spikes that could degrade arc stability. Snubber design and gate-drive layout are critical to control di/dt in these applications.
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Traction and High-Power Inverters
Rail traction auxiliaries and high-power industrial inverters exploit the FF800R12KF4's ability to operate with adequate thermal margin in DC-link architectures around 600-800V. The dual half-bridge arrangement directly implements one inverter phase leg, and the module supports paralleling for higher output current. Its isolated baseplate with standardized mounting suits the vibration-prone traction environment. Designers should derate for junction temperature below 150C and verify SOA with actual DC-link voltage, gate resistance, and coolant conditions using the datasheet characteristic curves.
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Solar Central Inverters
Utility-scale solar central inverters operating from 800V-class strings and DC buses use FF800R12KF4-class modules in the inverter bridge. The 1200V VCES rating provides headroom over 800V bus transients, and low conduction losses maximize weighted efficiency (CEC/EMI targets) across varying irradiance levels. Fast-recovery diodes handle reactive grid current, and parallel-module scalability supports 500kW-to-multi-MW blocks. Thermal design with liquid cooling plates and regular monitoring of Tj via on-state VCE sensing are recommended for long service life.
추천
추천 제품 요약
엔지니어링 참조 데이터: FF800R12KF4 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | FF800R12KF6C_B2 | FF800R16KF6-B2 | FF800R17KE3 |
|---|---|---|---|---|
| Package | High-power IGBT module, isolated baseplate | Same module family - verify outline | Same module family - verify outline | Same module family - verify outline |
| Brand | Infineon | Infineon | Infineon | Infineon |
| VCES | 1200 V | 1200 V | 1600 V | 1700 V |
| Continuous Collector Current | 800 A | 800 A | 800 A | 800 A |
| Configuration | Dual switch (half-bridge) with diodes | Dual switch with diodes | Dual switch with diodes | Dual switch with diodes |
| Chip Generation | KF4 trench-gate | KF6C (newer) | KF6 | E3 |
주요 차별점
- 1200V class for standard 690V drive buses (vs FF800R17KE3)
- 5000W power dissipation rating (vs FF800R16KF6-B2)
- Parallel-operation capability (vs FF800R12KF6C_B2)
설계 노트
The FF800R12KF4 can dissipate up to 5000W at full rating. Calculate junction temperature as Tj = Tamb + Ptotal * (RthJC + RthCH + Rth heatsink-to-ambient) using datasheet thermal values. For continuous high-load duty (motor drives, wind converters), liquid cooling or large forced-air heatsinks are typically mandatory. Keep Tj well below the 150C maximum - every 10C reduction roughly doubles module lifetime per standard power-module wear-out models.
Drive the gate with +15V for turn-on and -15V negative bias for turn-off. Negative bias is essential in half-bridge operation to prevent Miller-induced parasitic turn-on during high dv/dt switching of the complementary device. Size the gate resistor to balance switching loss against EMI and di/dt limits, and route gate traces with low inductance, twisted with the emitter Kelvin return where the package provides auxiliary emitter terminals.
Do not exceed the 1200V VCES rating: DC-link overshoot during short-circuit turn-off can exceed bus voltage substantially. Include DC-link snubbers or minimize bus inductance with laminated busbar design, and verify turn-off overvoltage at maximum load current. Also confirm mechanical compatibility (terminal position is upper, chassis mount, not surface mount) before substituting other 800A-class modules - outlines differ across generations.
규정 준수 정보
Compliance status not present in retrieved data; verify against Infineon product page and certificate of compliance.
