FM25CL64B-GTR - 64Kb SPI F-RAM Memory, 20MHz, 8-SOIC | Infineon
부품 번호: FM25CL64B-GTR ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.86 | $1.86 |
| 10 | $1.78 | $17.80 |
| 100 | $1.52 | $152.00 |
| 500 | $1.34 | $670.00 |
| 1,000 | $1.18 | $1,180.00 |
| 2,500 | $1.05 | $2,625.00 |
FM25CL64B-GTR 개요
What is F-RAM? Ferroelectric RAM (F-RAM, also called FeRAM) is a non-volatile memory technology that combines the fast, byte-level write capability and unlimited endurance of SRAM with the non-volatile data retention of flash or EEPROM. F-RAM stores data by polarizing a ferroelectric capacitor rather than trapping charge, which yields 10^14 endurance cycles (vs. ~1M for EEPROM) and writes that complete at bus speed without an erase-before-write cycle. In the broader taxonomy, F-RAM sits under non-volatile memory → random-access non-volatile memory → serial non-volatile memory (vs. EEPROM, MRAM, nvSRAM).
Key features of the FM25CL64B-GTR include hardware/software drop-in compatibility with industry-standard 25xxx serial EEPROM footprints and command sets, low active current consumption, deep power-down mode via the /S pin, and a hardware write-protect (/WP) pin that protects the upper quadrant of the memory array. The device is also RoHS compliant and qualified to the Infineon/Cypress F-RAM reliability standards.
Technically, the FM25CL64B-GTR uses a ferroelectric PZT (lead zirconate titanate) storage capacitor cell per bit and integrates a high-speed SPI slave controller with FIFO buffering. Because F-RAM cells do not need pre-conditioning before writing, the device delivers true byte-level writes at full bus speed, making it suitable for redundant data capture and high-write-rate logging applications.
Typical applications include industrial metering (electricity, gas, water), data logging in factory automation, automotive subsystems, RAID storage write-cache, black-box recorders, and any system that requires EEPROM-like non-volatile storage but writes too frequently for conventional EEPROM endurance. The wide operating temperature range makes the part suitable for outdoor industrial equipment and automotive under-hood designs.
When designing with this device, keep in mind that the FM25CL64B-GTR is a SPI-mode-only part. If the host bus is I²C, choose the FM24CL64B-GTR instead; if 5 V-only operation is required, consider the FM25640B-GTR family. The -G suffix denotes the 8-SOIC (208-mil) package, and -TR denotes tape-and-reel packaging.
This page synthesizes distributor pricing, SPI pinout diagrams, and drop-in alternative guidance not found on the bare manufacturer datasheet, helping design engineers compare the FM25CL64B-GTR against EEPROM and other F-RAM options in a single view.
드롭인 대체품: FM25CL64B-GTR — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
FM25CL64B-G
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FM25CL64B-DGTR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FM25CL64B-DG
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FM25CL64B-GTR SP005640621
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FM25V02A-GTR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MB85RS64VYPNF-G-JNE1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FM25CL64B-GTR 최대 정격 & 전기적 특성
| 메모리 유형 | Non-volatile F-RAM (Ferroelectric RAM) |
| 메모리 크기 | 64 Kbit (8 K × 8) |
| 인터페이스 | SPI (Mode 0 and Mode 3 compatible) |
| Maximum SPI Clock Frequency | 20 MHz |
| 동작 공급 전압 | 3.0 V to 3.6 V |
| Read/Write Endurance | 10^14 cycles (typical) |
| Data Retention | 10 years (typical) |
| Write Latency | 0 ms (NoDelay™ writes, bus-speed completion) |
| 동작 온도 범위 | -40 °C to +85 °C (industrial) |
| 패키지 | 8-SOIC (208-mil, -G suffix) |
| 실장 유형 | Surface Mount |
| Write Protection | Yes (hardware /WP pin, protects upper quadrant) |
| Power-Down Mode | Yes (deep power-down via /S pin de-assertion) |
| RoHS 상태 | Compliant |
FM25CL64B-GTR 핀 구성
| 핀 1 | /CS — Chip Select, active low. Pulling /CS low enables the SPI interface; pulling /CS high initiates deep power-down mode. |
| 핀 2 | SO — Serial Data Out. Drives data from the F-RAM to the SPI master on the SCK falling edge. |
| 핀 3 | /WP — Write Protect, active low. When asserted, the upper quadrant of the memory array is protected from writes. |
| 핀 4 | GND — Ground reference for the 3.3 V supply and SPI signals. |
| 핀 5 | SI — Serial Data In. Accepts command, address, and write data from the SPI master on the SCK rising edge. |
| 핀 6 | SCK — Serial Clock. SPI clock input, up to 20 MHz; supports Mode 0 (CPOL=0, CPHA=0) and Mode 3 (CPOL=1, CPHA=1). |
| 핀 7 | /HOLD — Hold, active low. When asserted, pauses a serial transfer without resetting the SPI state machine. |
| 핀 8 | VCC — Power supply, 3.0 V to 3.6 V (3.3 V nominal). |
일반적인 애플리케이션
FM25CL64B-GTR 적합 용도: 6 애플리케이션s: Industrial Electricity Metering, Factory Automation Data Logging, Automotive Subsystem Event Recorder, RAID / NAS Write Cache, Medical Device Data Capture, IoT Sensor Nodes and Edge Worn Devices.
Industrial Electricity Metering
The FM25CL64B-GTR is widely used in single- and multi-phase electricity meters to log cumulative energy consumption, time-of-use tariffs, and tamper events. Its 10^14 write endurance means a meter logging consumption every 30 seconds will not wear out the F-RAM cell for more than 950 million years. The 64-Kbit (8 KB) capacity is sufficient to store months of interval data, daily billing snapshots, and event logs. Its 3.3 V SPI interface connects directly to metering MCUs such as the TI MSP430AFE2xx or the Renesas RL78/I1A, simplifying layout. Compared with serial EEPROM, the FM25CL64B-GTR eliminates the 5 ms write-cycle penalty that would otherwise force the meter's host MCU to stall or buffer writes, allowing accurate energy measurement during logging events.
추천
Factory Automation Data Logging
In factory PLCs, vibration monitors, and process controllers, the FM25CL64B-GTR serves as a high-endurance black-box memory for alarm logs, calibration records, and process trace data. The device's -40 °C to +85 °C industrial temperature range supports cabinet-free deployment near motors and drives. SPI Mode 0/3 operation allows direct connection to a wide range of industrial MPUs and DSPs. With NoDelay™ writes at full 20 MHz bus speed, the FM25CL64B-GTR can record thousands of process variables per second without slowing the deterministic control cycle. The hardware /WP pin allows the host to protect a portion of the array for safety logs that must not be overwritten by the application.
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Automotive Subsystem Event Recorder
The FM25CL64B-GTR (and its automotive-grade -DGTR variant) is used in automotive subsystems such as HVAC controllers, instrument clusters, and battery-management systems to record diagnostic events and configuration parameters. The 8-SOIC package is small enough for ECU PCBs while providing the wide -40°C to +85°C operating window. Compared with EEPROM, the F-RAM write endurance eliminates the wear-out failure mode for highly written automotive logs (e.g., charge-cycle counters in EV battery packs). The /HOLD pin allows the host to suspend a serial transfer without losing the bus, useful when the same SPI bus is shared with other peripherals during interrupt service routines.
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RAID / NAS Write Cache
In storage systems (RAID controllers, NAS appliances, SSD write-caches), the FM25CL64B-GTR serves as a small, fast non-volatile write buffer that protects in-flight data during power loss. Its 20 MHz SPI bus sustains rapid flushes from the storage controller, while the F-RAM cell technology eliminates the need for a supercapacitor-backed SRAM cache or a more expensive nvSRAM. The 64-Kbit (8 KB) capacity is sufficient to hold the dirty write cache of small RAID volumes or NAS journaling buffers. Compared with battery-backed SRAM, the F-RAM requires no battery maintenance and provides instant power-up access per the Infineon datasheet's 30 µs/V power-up specification.
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Medical Device Data Capture
In medical devices such as infusion pumps, glucose meters, and patient monitors, the FM25CL64B-GTR stores patient logs, dose history, calibration parameters, and alarm events that must persist across power cycles. The 10-year data retention and -40 °C to +85 °C industrial range support hospital and home-care environments. NoDelay™ writes simplify firmware because the host does not need to poll a status register or implement write-cycle delays, reducing real-time software complexity. The 8-SOIC package is straightforward to place on medical PCBs and is compatible with industry-standard SPI EEPROM footprints, allowing designers to upgrade existing EEPROM-based designs without board changes.
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IoT Sensor Nodes and Edge Worn Devices
In IoT sensor nodes, smart meters, and edge devices, the FM25CL64B-GTR provides local non-volatile buffering of sensor data before uplink transmission, particularly in disconnect-prone deployments (cellular, LoRa, NB-IoT). The 64-Kbit density holds hours of buffered telemetry, while the 10^14 endurance supports frequent retransmission logging. The 3.3 V single-supply operation matches coin-cell or Li-Ion battery rails common in IoT edge devices. Compared with serial flash, the FM25CL64B-GTR supports byte-level writes without page buffers or erase-before-write, simplifying low-power firmware. The hardware write-protect (/WP) pin allows the host to lock configuration parameters once provisioned.
추천
추천 제품 요약
엔지니어링 참조 데이터: FM25CL64B-GTR — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | FM25CL64B-G | FM25CL64B-DGTR | FM25V02A-GTR | MB85RS64VYPNF-G-JNE1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Fujitsu |
| Package | 8-SOIC (208-mil) | 8-SOIC (208-mil) - same | 8-SOIC (208-mil) - same | 8-SOIC (208-mil) - same | 8-SOIC (208-mil) - same |
| Memory Density | 64 Kbit (8 KB) | 64 Kbit (same) | 64 Kbit (same) | 256 Kbit (+300%) | 64 Kbit (same) |
| Interface | SPI (20 MHz) | SPI (same) | SPI (same) | SPI (same) | SPI (same) |
| Operating Voltage | 3.0 V to 3.6 V | 3.0 V to 3.6 V (same) | 3.0 V to 3.6 V (same) | 2.0 V to 5.5 V (wider range) | 2.7 V to 3.6 V (similar) |
| Write Endurance | 10^14 cycles | 10^14 cycles (same) | 10^14 cycles (same) | 10^12 cycles | 10^10 cycles |
| Write Latency | 0 ms (NoDelay™) | 0 ms (same) | 0 ms (same) | 0 ms (same) | 0 ms (same) |
| Automotive Qualified | No (standard industrial) | No | Yes (AEC-Q100 automotive grade) | No | AEC-Q100 (Grade 3) |
주요 차별점
- Automotive-grade option with identical footprint (vs FM25CL64B-DGTR)
- No write-cycle delay at full bus speed (vs M95040 EEPROM (STMicroelectronics))
- 10^14 write endurance - effectively unlimited (vs W25Q64 NOR flash (Winbond))
- Hardware /WP and /HOLD pins (vs MB85RS64VYPNF-G-JNE1 (Fujitsu FRAM))
설계 노트
Place the FM25CL64B-GTR close to the host MCU's SPI bus to keep the SCK, SI, SO traces short and matched. The /CS line should be a dedicated MCU GPIO, not wired to a permanently-low net, because de-asserting /CS is what initiates the device's deep power-down mode (used to save standby current between accesses). Per the Infineon datasheet, the device enters deep power-down within a maximum of 1 µs of /CS going high, dropping standby current to the deep-power-down specification.
Estimated: at 1 MHz SCK and 100% bus utilization, the FM25CL64B-GTR's active current is typically a few mA at 3.3 V, equating to ~10 mW. Designers powering the F-RAM from a coin-cell or other tight-energy source should leverage the /CS-controlled deep power-down mode, which limits average current to a few µA when the part is idle. Per the Infineon datasheet family, the actual current value depends on read/write ratio and should be confirmed against the latest datasheet revision before final power-budget sign-off.
Do not assume the FM25CL64B-GTR behaves like an EEPROM at the firmware level. Because F-RAM writes complete at bus speed (NoDelay™), firmware that polls a status register or inserts a delay loop after a write - typically required for EEPROM page-mode - will appear to work but wastes CPU time. Conversely, firmware written for EEPROM that does NOT poll a status register will work correctly on the FM25CL64B-GTR with no changes. Per the datasheet, also note the power-up-to-first-access specification of 30 µs/V that the FM25CL64B datasheet adds vs. the legacy FM25CL64.
The SPI bus on the FM25CL64B-GTR runs up to 20 MHz; at this frequency, signal-integrity considerations matter. Use a 4-layer PCB if possible, with a continuous ground plane beneath the SPI traces, and keep trace lengths under 50 mm to avoid ringing. Place a 100 nF decoupling capacitor as close as possible to the VCC pin (pin 8), per the Infineon datasheet. If the SCK line is shared with other SPI peripherals, use a series resistor (22-33 Ω) at the FM25CL64B-GTR's SCK pin to damp reflections.
규정 준수 정보
RoHS compliant per Infineon/Cypress product page and PartGenie listing. Not AEC-Q100 qualified in standard -GTR variant; choose FM25CL64B-DGTR for AEC-Q100 automotive applications. The FM25CL64B family is lead-free and halogen-free per Infineon environmental documentation.
