FS35R12W1T4 - 1200V 35A EasyPACK 1B IGBT Module | Infineon
부품 번호: FS35R12W1T4 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $34.6 | $34.60 |
| 10 | $31.5 | $315.00 |
| 100 | $28.2 | $2,820.00 |
| 500 | $25.4 | $12,700.00 |
| 1,000 | $22.8 | $22,800.00 |
FS35R12W1T4 개요
An IGBT module is a hybrid power semiconductor assembly that combines insulated-gate bipolar transistors with co-packaged freewheeling diodes in an isolated, baseplate-less housing. It belongs to the power module family within discrete semiconductors, sitting above discrete IGBTs and below integrated power stacks (IPMs) in the power-conversion hierarchy. Six-pack modules are the workhorse building block of three-phase variable-frequency drives, servo amplifiers, and solar string inverters.
Key features of the FS35R12W1T4 include a 1200 V collector-emmitter blocking voltage (VCE), 35 A nominal collector current per switch, TRENCHSTOP IGBT4 trench/field-stop technology for low VCE(sat) and soft switching, an integrated NTC for overtemperature protection, and an operating junction range from -40 C to +150 C. The EasyPACK 1B housing is baseplate-less and uses screw-mount power terminals, enabling compact liquid-cooled or forced-air designs.
The IGBT4 die is optimized for hard-switching topologies up to roughly 16 kHz, with low switching losses and a robust short-circuit ruggedness of 10 us. The integrated EC4 diodes use the latest emitter-controlled generation for reduced reverse-recovery losses, which directly improves inverter efficiency at higher switching frequencies.
Typical applications include three-phase motor drives for industrial pumps, fans, and servo amplifiers, as well as solar string inverters, UPS systems, and welding power supplies. The press-fit variant FS35R12W1T4_B11 shares the same electrical die and offers solder-free assembly for high-volume manufacturing.
When designing with this module, ensure the DC-link bus bar layout maintains loop inductance below 30 nH to keep voltage overshoot within the 1200 V rating. Always read the integrated NTC through an isolated amplifier and de-rate the module above 90 C case temperature per the datasheet thermal curves.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.
드롭인 대체품: FS35R12W1T4 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: FS35R12W1T4 (동일 폼 팩터 및 풋프린트) — 차이점: Integrated NTC, Mounting Type, Topology.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
FS35R12W1T4_B11
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FS35R12W1T7
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FP35R12W2T4
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
FS35R12W1T4 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| 토폴로지 | Six-pack (3-phase inverter) |
| Collector-Emitter Voltage (VCE) | 1200 V |
| Nominal Collector Current (IC nom) | 35 A |
| DC Collector Current | 65 A (per Mouser listing, TC limited) |
| IGBT Technology | TRENCHSTOP IGBT4 (Trench/Field-stop) |
| Diode Technology | Emitter Controlled 4 (EC4) |
| Integrated NTC | Yes |
| 패키지 | EasyPACK 1B (baseplate-less) |
| 실장 유형 | Screw-mount power terminals, PressFIT-pin option (FS35R12W1T4_B11) |
| 동작 접합 온도 | -40 C to +150 C |
| Configuration | 6 IGBTs + 6 freewheeling diodes |
| RoHS 상태 | Compliant |
| Short-Circuit Withstand Time | 10 us (typical for IGBT4 class) |
| Datasheet Document Length | 9 pages (per AllDatasheet mirror) |
| Power Dissipation Range | 135 W - 275 W (EasyPACK 1B family) |
FS35R12W1T4 핀 구성
| 핀 1 | G1 — Gate of IGBT 1 (high-side, phase U) |
| 핀 2 | E1 — Auxiliary emitter of IGBT 1 |
| 핀 3 | G2 — Gate of IGBT 2 (low-side, phase U) |
| 핀 4 | E2 — Auxiliary emitter of IGBT 2 |
| 핀 5 | G3 — Gate of IGBT 3 (high-side, phase V) |
| 핀 6 | E3 — Auxiliary emitter of IGBT 3 |
| 핀 7 | G4 — Gate of IGBT 4 (low-side, phase V) |
| 핀 8 | E4 — Auxiliary emitter of IGBT 4 |
| 핀 9 | G5 — Gate of IGBT 5 (high-side, phase W) |
| 핀 10 | E5 — Auxiliary emitter of IGBT 5 |
| 핀 11 | G6 — Gate of IGBT 6 (low-side, phase W) |
| 핀 12 | E6 — Auxiliary emitter of IGBT 6 |
IGBT Forward Bias 안전 동작 영역 (FBSOA)
일반적인 애플리케이션
FS35R12W1T4 적합 용도: 6 애플리케이션s: Industrial Motor Drive (VFD), Solar String Inverter, Servo Amplifier, Uninterruptible Power Supply (UPS), Welding Power Supply, Electric Vehicle Charging Station.
Industrial Motor Drive (VFD)
The FS35R12W1T4 fits three-phase variable-frequency drives for industrial pumps, fans, and compressors up to about 25 kW. Its 1200 V VCE rating covers 480 V AC and 690 V AC bus systems with standard 1.5x derating margin, while the 35 A nominal collector current supports continuous line currents around 25 A RMS at typical 8-16 kHz switching. Placed in a six-pack topology between the rectifier and motor, the module eliminates discrete IGBT paralleling and reduces PCB loop inductance.
추천
Solar String Inverter
For solar string inverters in the 10-20 kW residential and small-commercial range, the FS35R12W1T4 provides the high-voltage DC-AC conversion stage. Its 1200 V blocking voltage handles 1000 V DC string open-circuit voltages with margin, while the TRENCHSTOP IGBT4 die delivers the efficiency required to meet 98% European weighted efficiency targets. The integrated NTC enables overtemperature derating during peak afternoon output.
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Servo Amplifier
Servo amplifiers for CNC machines and robotics use the FS35R12W1T4 to drive three-phase servo motors with high dynamic response. The module's 10 us short-circuit ruggedness and low-inductance EasyPACK 1B layout enable safe operation during hard-switching servo current loops at 8-16 kHz PWM. The integrated EC4 diodes reduce reverse-recovery losses that would otherwise stress the DC-link capacitors during fast deceleration regenerations.
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Uninterruptible Power Supply (UPS)
Online double-conversion UPS systems in the 15-30 kVA range use the FS35R12W1T4 as the inverter stage that produces clean sine-wave output from a battery-backed DC bus. The 1200 V VCE rating covers 384-480 V battery strings with derating margin, and the six-pack configuration eliminates the need for discrete IGBT bridges that would require complex gate-driver isolation. The integrated NTC supports thermal management in continuous-rated data-center UPS designs.
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Welding Power Supply
Industrial welding inverters benefit from the FS35R12W1T4's robust short-circuit handling and EasyPACK 1B thermal performance. Welding loads present repetitive short-circuit transients that stress IGBT modules; the IGBT4 die's 10 us short-circuit withstand time is engineered for this duty cycle. The baseplate-less design allows direct cold-plate mounting for liquid-cooled welder enclosures where traditional through-hole IGBTs would fail under thermal cycling.
추천
Electric Vehicle Charging Station
Three-phase 22 kW AC EV chargers and 25 kW DC fast-charging modules use the FS35R12W1T4 as the grid-tie inverter bridge. Its 1200 V rating covers 800 V battery architectures with derating margin, and the EasyPACK 1B footprint is widely supported in compact charger enclosures. The integrated NTC enables CAN-reported thermal telemetry required for ISO 15118 charging protocol compliance, while the IGBT4 die delivers the 97%+ efficiency needed for utility-grade charger installations.
추천
추천 제품 요약
엔지니어링 참조 데이터: FS35R12W1T4 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | FS35R12W1T4_B11 | FS35R12W1T7 | FP35R12W2T4 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | EasyPACK 1B (screw-mount) | EasyPACK 1B (PressFIT) | EasyPACK 1B | EasyPACK 2B (larger) |
| Collector-Emitter Voltage (VCE) | 1200 V | 1200 V | 1200 V | 1200 V |
| Nominal Collector Current | 35 A | 35 A | 35 A | 35 A |
| IGBT Die Technology | TRENCHSTOP IGBT4 | TRENCHSTOP IGBT4 | TRENCHSTOP IGBT7 (latest) | TRENCHSTOP IGBT4 |
| Diode Technology | Emitter Controlled 4 (EC4) | EC4 | EC7 (upgraded) | EC4 |
| Integrated NTC | Yes | Yes | Yes | Yes |
| Assembly Method | Solder pins | PressFIT pins (solder-free) | Solder pins | Solder pins |
주요 차별점
- TRENCHSTOP IGBT4 technology with 10 us short-circuit ruggedness (vs FS35R12W1T7 (IGBT7 variant))
- Baseplate-less EasyPACK 1B package with low thermal mass (vs EasyPACK 2B modules (larger footprint))
- Integrated NTC eliminates external temperature sensor BOM (vs Discrete IGBTs requiring external NTC)
설계 노트
Estimated: DC-link loop inductance must stay below 30 nH to prevent VCE overshoot beyond the 1200 V rating. Use a laminated bus-bar sandwich with positive and negative DC rails on parallel planes separated by a thin dielectric. The EasyPACK 1B baseplate-less design allows the bus bar to be mounted directly to the module's power terminals for minimum stray inductance.
Mount the FS35R12W1T4 to a cold plate or forced-air heatsink with thermal compound (TIM) applied at less than 50 um bond-line thickness. The baseplate-less EasyPACK 1B has higher thermal resistance than baseplate modules, so plan for a heatsink with thermal resistance below 0.1 K/W at full 25 A RMS load. Always de-rate above 90 C case temperature per the datasheet thermal curves.
Do not exceed 16 kHz switching frequency without re-evaluating switching losses against the published Eon/Eoff curves. The IGBT4 die is optimized for 8-16 kHz; pushing beyond 20 kHz wastes efficiency gains in the EC4 diode recovery. Always read the NTC through an isolated amplifier (e.g., digital isolator with ADC) to avoid ground loops that can damage the gate driver.
규정 준수 정보
RoHS and REACH compliant per Infineon product page. Industrial-grade (not AEC-Q100 automotive qualified) - select FS35R12W1T4_B11 if automotive grade is required.
