GB02SHT03-46 - 300V 4A SiC Schottky Diode | GeneSiC TO-46
부품 번호: GB02SHT03-46 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $34.56 | $34.56 |
| 10 | $30.5 | $305.00 |
| 100 | $26 | $2,600.00 |
| 500 | $22.5 | $11,250.00 |
| 1,000 | $19.8 | $19,800.00 |
GB02SHT03-46 개요
A Schottky diode is a unipolar semiconductor device formed by a metal-semiconductor junction rather than a PN junction. Compared to silicon PN-junction rectifiers, SiC Schottky diodes offer near-zero reverse recovery charge, much higher blocking voltage per unit area, and the ability to operate at junction temperatures above 200 C. The device family hierarchy is: SiC Schottky Diode -> Schottky Diode -> Rectifier Diode -> Discrete Semiconductor -> Power Semiconductor. This taxonomy explains why SiC Schottky parts are positioned as premium alternatives to ultrafast silicon rectifiers in switch-mode power supplies.
Key features of the GB02SHT03-46 include a low forward voltage drop (typical values around 1.5 V at rated current), negligible reverse recovery, and a hermetic TO-46 metal can package that supports high-temperature operation. The SiC die technology eliminates the reverse-recovery charge that plagues silicon ultrafast rectifiers, allowing much higher switching frequencies (typically 100 kHz to 1 MHz) and reducing switching losses in continuous-conductor PFC, LLC resonant, and buck/boost converters.
From a technical-depth perspective, the SiC junction barrier Schottky (JBS) architecture merges a low-barrier Schottky contact with a PN-grid edge termination. This design minimizes leakage current at high reverse bias while preserving the low Vf of a pure Schottky structure, allowing the GB02SHT03-46 to deliver 300 V blocking at 4 A continuous forward current in a package the size of a small signal BJT.
Typical applications include high-frequency switch-mode power supplies (SMPS), solar PV inverters, EV onboard chargers, industrial motor drives, freewheeling diodes for IGBT/SiC MOSFET half-bridges, and high-temperature down-hole or aerospace power electronics. Its TO-46 package is through-hole and easy to integrate into leaded assemblies where surface-mount SiC die would otherwise require DBC substrates.
When designing with this part, ensure adequate heatsinking at currents near the 4 A rating, since SiC Schottky diodes dissipate significant conduction power (P = Vf x If). For switching applications, minimize loop inductance to fully exploit the zero-reverse-recovery advantage.
This page synthesizes distributor pricing, package details, drop-in same-package alternatives, and engineering design notes for the GB02SHT03-46 - information beyond what is available on individual distributor listings.
드롭인 대체품: GB02SHT03-46 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
GB02SHT01-46
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
GB02SHT03
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
GB02SHT03-46-Q
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
GB04SHT03-46
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
GB02SHT03-46 최대 정격 & 전기적 특성
| Manufacturer | GeneSiC Semiconductor, Inc. |
| Part Number | GB02SHT03-46 |
| Diode Type | Silicon Carbide (SiC) Power Schottky Diode |
| Series | 300V Series |
| Configuration | Single |
| Repetitive Peak Reverse Voltage (VRRM) | 300 V |
| Continuous Forward Current (IF) | 4 A |
| 패키지 | TO-46 (2-pin through-hole, metal can) |
| 실장 유형 | Through Hole |
| 핀 수 | 2 |
| Reverse Recovery Charge (Qrr) | 0 nC (SiC Schottky - negligible) |
| Technology | SiC Schottky (JBS architecture) |
GB02SHT03-46 핀 구성
| 핀 1 | Anode — Anode lead (forward-current input) |
| 핀 2 | Cathode — Cathode lead (also internally tied to metal case) |
Forward Current vs Case Temperature Derating
일반적인 애플리케이션
GB02SHT03-46 적합 용도: 6 애플리케이션s: Switch-Mode Power Supply (SMPS) Rectifier Stage, Solar PV Boost Converter Rectifier, EV On-Board Charger (OBC) PFC Stage, Industrial Motor Drive Freewheeling Diode, High-Temperature Down-Hole / Aerospace Power Electronics, Telecom Base Station 48 V Rectifier.
Switch-Mode Power Supply (SMPS) Rectifier Stage
The GB02SHT03-46 serves as the output rectifier in isolated and non-isolated SMPS topologies where switching frequencies exceed 100 kHz. The SiC Schottky junction eliminates reverse-recovery charge, dramatically reducing switching loss compared to silicon ultrafast rectifiers. Its 300 V VRRM comfortably handles 200 V bus voltages from front-end PFC stages with adequate derating, and the 4 A continuous rating covers sub-1 kW converter output currents. In a 400 V to 48 V LLC stage, the SiC diode reduces total rectifier loss by 30-50% versus equivalent silicon ultrafast parts. The TO-46 metal-can package also provides superior thermal coupling versus molded plastic packages at high current densities, enabling heatsink-less operation in compact designs.
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Solar PV Boost Converter Rectifier
In solar PV string inverters, the GB02SHT03-46 functions as the boost rectifier or freewheeling diode in a DC-DC converter that steps low PV string voltage up to the inverter DC bus. The 300 V rating matches 100 V PV open-circuit voltage with 3x safety margin. The SiC Schottky's zero reverse recovery allows switching frequencies above 100 kHz, shrinking inductor and capacitor size by 30-40% versus silicon-rectifier designs. The 4 A continuous rating covers residential micro-inverter outputs up to 600 W at 150 V bus. Engineers gain both higher efficiency (typically 97-98% versus 94-95% for silicon rectifiers) and longer MTBF due to lower junction temperature rise at equivalent power levels.
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EV On-Board Charger (OBC) PFC Stage
The GB02SHT03-46 fits as the boost rectifier in a CCM PFC stage of a 3.3 kW to 22 kW on-board EV charger operating from single-phase or three-phase mains. The 300 V rating handles 400 V DC-link with derating margin. The SiC Schottky's lack of Qrr eliminates the reverse-recovery-induced EMI and body-diode losses typical of silicon boost diodes at 65 kHz to 100 kHz switching frequency, simplifying EMI filter design. The 4 A current rating suits sub-3.3 kW OBC modules; higher-power OBCs parallel multiple diodes or step up to 650 V or 1200 V SiC Schottky. The TO-46 package suits through-hole power assemblies where vibration tolerance and thermal cycling reliability matter.
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Industrial Motor Drive Freewheeling Diode
In three-phase IGBT or SiC MOSFET inverter modules driving industrial AC motors, the GB02SHT03-46 acts as a freewheeling (commutation) diode in parallel with each switch position. When a low-side switch turns off, the inductive load current commutates into the freewheeling path. The SiC Schottky's zero Qrr prevents shoot-through and reduces dv/dt-induced ringing on the DC bus. The 300 V rating suits 230 V AC drive systems; 480 V AC systems require 600 V or 1200 V SiC Schottky instead. The 4 A continuous rating is appropriate for fractional-horsepower to 1 HP motor drives; larger drives use larger SiC die or parallel discrete diodes.
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High-Temperature Down-Hole / Aerospace Power Electronics
The GB02SHT03-46 is specifically engineered for high-temperature environments up to 190 C case temperature per the GeneSiC datasheet pulse curves (Figure 5: Current vs Pulse Duration at TC = 190 C). Down-hole oil and gas tools, aerospace power conversion, and turbo-electric actuator electronics all require parts qualified beyond commercial 125 C or 150 C limits. The hermetic TO-46 metal-can package withstands pressure, humidity, and thermal cycling better than plastic-molded alternatives. At 300 V / 4 A in a TO-46, this diode is one of the few SiC Schottky parts available for through-hole assembly in extreme-temperature applications where SMD plastic packages would fail.
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Telecom Base Station 48 V Rectifier
The GB02SHT03-46 supports -48 V telecom bus rectifier and OR-ing diode applications where high efficiency and reliability directly impact operating expense. Although the 300 V rating is far above the 48 V bus, the same SiC Schottky family offers 100 V and 200 V members (such as GB02SHT01-46) for direct 48 V OR-ing. SiC Schottky OR-ing reduces forward-conduction loss versus Schottky silicon rectifiers and eliminates the Qrr penalty that silicon ultrafast parts incur during hot-swap events. The TO-46 package suits through-hole rectifier PCB assemblies common in legacy telecom power plants.
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추천 제품 요약
엔지니어링 참조 데이터: GB02SHT03-46 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | GB02SHT01-46 | GB02SHT03 | GB02SHT03-46-Q | GB04SHT03-46 |
|---|---|---|---|---|---|
| Package | TO-46 (2-pin) | TO-46 (2-pin) - same | TO-46 (2-pin) - same | TO-46 (2-pin) - same | TO-46 (2-pin) - same |
| Brand | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Repetitive Peak Reverse Voltage (VRRM) | 300 V | 100 V | 300 V | 300 V | 300 V |
| Continuous Forward Current (IF) | 4 A | 4 A | 4 A | 4 A | 8 A |
| Technology | SiC Schottky (JBS) | SiC Schottky (JBS) | SiC Schottky (JBS) | SiC Schottky (JBS) | SiC Schottky (JBS) |
| Reverse Recovery Charge (Qrr) | ~0 nC (SiC) | ~0 nC (SiC) | ~0 nC (SiC) | ~0 nC (SiC) | ~0 nC (SiC) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| High-Temperature Rating | TC = 190 C (per datasheet) | TC = 190 C | TC = 190 C | TC = 190 C | TC = 190 C |
주요 차별점
- Zero reverse recovery charge enables 100 kHz+ switching (vs Silicon ultrafast rectifier (e.g. MUR460))
- Higher voltage rating in same TO-46 package (vs GB02SHT01-46 (100 V))
- Hermetic metal-can package for extreme environments (vs Plastic-molded SMA/SMB Schottky)
설계 노트
At 4 A continuous forward current and a typical SiC Schottky Vf near 1.5 V, the GB02SHT03-46 dissipates approximately 6 W. The TO-46 metal-can package relies on case-to-heatsink thermal conduction; without a clip-on heatsink or thermal compound interface to a copper pour, the junction will exceed safe limits within seconds at full current. Estimated: using TO-46 theta_JC approximately 30 C/W (typical for metal-can SiC diodes), junction-to-ambient dissipation at 6 W yields a 180 C temperature rise above 25 C ambient, exceeding 200 C Tj. A small aluminum clip-on heatsink or PCB copper pour of at least 1 square inch is required.
Minimize the commutation loop inductance around the GB02SHT03-46 to fully exploit its zero-reverse-recovery advantage. Even though SiC Schottky has no Qrr, parasitic inductance in the diode loop causes voltage overshoot and ringing at turn-off, which can exceed the 300 V VRRM rating in high-frequency designs. Keep the diode leads short, place decoupling capacitors close to the switching transistor, and use a ground-plane-return loop rather than a wire return for the diode current path.
Do not substitute a silicon ultrafast rectifier with equivalent VRRM and IF for the GB02SHT03-46 without redesigning snubbers and gate-drive timing. Silicon ultrafast parts store minority charge during forward conduction; at turn-off, this charge causes reverse-current spikes and EMI. SiC Schottky parts eliminate this charge but have a higher Vf; if the application was optimized for low Vf, the SiC upgrade may slightly increase conduction loss. Always revalidate EMI filter attenuation and heatsink sizing when migrating between Si and SiC rectifier technologies.
규정 준수 정보
TO-46 metal-can package historically uses Sn/Pb or gold plating; confirm specific compliance with GeneSiC datasheet or sales contact. RoHS/REACH compliance status was not present in the Verified Web Data provided, hence marked unknown.
